SI4438 Search Results

65521

Abstract: 9221 AN609 73727
Contextual Info: Si4438DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

si4438

Abstract: Si4438-Bxx-FM Si4432 9-pin marking 132 44381C
Contextual Info: Si4438 H I G H - P ERFORMANCE , L O W -C U R R E N T T RANSCEIVER Features  Applications  SDN 1 RXp 2 15 nSEL 14 SDI GND PAD TX 4 13 SDO Preliminary Rev 0.1 12/12 Copyright 2012 by Silicon Laboratories 7 8 9 VDD GPIO0 10 11 nIRQ GPIO1 6 TXRamp Silicon Laboratories' Si4438 is a high-performance, low-current

Si4438DY-T1-E3

Abstract: Si4438DY-T1-GE3 si4438
Contextual Info: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si4438 H I G H - P ERFORMANCE , L O W -C U R R E N T T RANSCEIVER Features  Applications  SDN 1 RXp 2 15 nSEL 14 SDI GND PAD TX 4 13 SDO Rev 1.0 6/14 Copyright 2014 by Silicon Laboratories 7 8 9 VDD GPIO0 10 11 nIRQ GPIO1 6 TXRamp Silicon Laboratories' Si4438 is a high-performance, low-current

74156

Abstract: Si4438DY
Contextual Info: SPICE Device Model Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI4438DY

Abstract: 12DE 73581
Contextual Info: Si4438DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID rDS(on) (W) (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 D TrenchFETr Power MOSFET D 100 % Rg Tested D RoHS Compliant Qg (Typ) 41 nC RoHS COMPLIANT

what is datasheet 74156

Abstract: 74156
Contextual Info: SPICE Device Model Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: AN732 Si4438 TX M ATCHING 1. Introduction This application note provides a description of the matching of the TX Power Amplifier PA on the Si4438 RFIC working in the 470–510 MHz Chinese AMR band. Specifically, this document does not address the matching

SI4438

Contextual Info: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI4438DY-T1-E3

Abstract: SI4438 73581
Contextual Info: Si4438DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID rDS(on) (W) (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 D TrenchFETr Power MOSFET D 100 % Rg Tested D RoHS Compliant Qg (Typ) 41 nC RoHS COMPLIANT

Si4438DY-T1-E3

Abstract: Si4438DY-T1-GE3
Contextual Info: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si4438DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.004 at VGS = 4.5 V 29 VDS (V) 30 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si4355/Si4455

Contextual Info: AN655 R ANGE TE S T A P P LICATIO N FOR E Z R ADIO AND E Z R ADIO PRO ® 1. Introduction The range evaluation demo provides an easy way to evaluate the link budget of EZRadio® and EZRadioPRO® devices by performing a range test between two nodes. The range test demo implements Packet Error Rate PER

Contextual Info: AN632 WDS U SER ’ S G U ID E FOR E Z R ADIO PRO D EVICES 1. Introduction Wireless Development Suite WDS is a set of tools, reference designs and utilities supporting the Silicon Labs line of ISM band RFICs. 1.1. Wireless Development Suite WDS Chip Configurator (WDS CC) is a software utility used to configure and test the transceiver. The WDS Chip

Contextual Info: S i4438 - C H I G H -P E R F O R M A N C E, L O W -C U R R E N T T R A N SC E I V E R Features    Frequency range = 425–525 MHz Receive sensitivity = –124 dBm Modulation  58 75   G FSK    OOK  Max output power

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: AN648 Si4063/Si4463/64 TX M ATCHING 1. Introduction This application note describes the matching methods for the TX Power Amplifier PA on the Si4063/Si4463/64 RFICs. This document does not address the matching procedure for the PA on the Si4060/Si4460/61 RFICs. Since

Contextual Info: AN633 PROGRAMMING GUIDE FOR E Z R A D IO P R O S i 4 X 6 X D E V I C E S 1. Introduction This document is intended to serve as a guide for application development with EZRadioPRO® radio ICs. It introduces the major parts of the hardware platform, such as the RF Pico board, which contains the radio and the

Contextual Info: EZRadioPRO-DK EZR ADIO P R O D EVELOPMENT K I TS U SER ’ S G UIDE 1. Kits Overview This user's guide describes the development kits of the new EZRadioPRO wireless development kit family. Each kit contains two RF nodes based on the Wireless Motherboard to support evaluation and development of sub-GHz RF

Contextual Info: AN627 Si4060/Si4460/61 L O W - P OWER PA M ATCHING 1. Introduction This application note provides a description of the matching techniques applied to the low-power Si4060 TX and Si4460/61 TRX RFIC family. The typical power regime of the Si4461 is in the +13 to +16 dBm range, while the

LTC4352

Abstract: LTM4608 MOSFET and parallel Schottky diode mosfet with Integrated Schottky Diodes DFN-12 LN1261CAL LN1351C SBG1025L Si7336ADP SMAJ12A
Contextual Info: L DESIGN FEATURES 0V to 18V Ideal Diode Controller Saves Watts and Space over Schottky by Pinkesh Sachdev Introduction Schottky diodes are used in a variety of ways to implement multisource power systems. For instance, high availability electronic systems, such

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

schematic diagram 12v to 48v dc buck boost conver

Abstract: schematic diagram 110v dc charger ultrasonic transducers 48V laptop Lithium-ion battery diagram schematic 12V, 20A automatic charger schematic Sanyo supercapacitors ultrasonic transducers 50w 40 khz mobile battery charger circuit using 7805 LTC4009-2 nesscap active balancing circuit
Contextual Info: LINEAR TECHNOLOGY SEPTEMBER 2008 IN THIS ISSUE… COVER ARTICLE Replace Batteries in Power RideThrough Applications with Robust Supercaps and 3mm x 3mm Capacitor Charger .1 Jim Drew Linear in the News… .2