SI4390DY Search Results

Si4390DY

Abstract: Si4390DY-T1-E3
Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.5 0.0135 at VGS = 4.5 V 10.5 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for

Si4390DY

Abstract: Si4390DY-T1
Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching WFETr FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 12.5 0.0135 @ VGS = 4.5 V

SI4390DY-T1-E3

Abstract: SI4390DY
Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.5 0.0135 at VGS = 4.5 V 10.5 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for

Si4390DY

Abstract: Si4390DY-T1
Contextual Info: Si4390DY New Product Vishay Siliconix N-Channel Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 12.5 0.0135 @ VGS = 4.5 V

Si4390DY

Contextual Info: SPICE Device Model Si4390DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4390DY

Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching WFETr FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 12.5 0.0135 @ VGS = 4.5 V

SI4390DY

Contextual Info: Si4390DY New Product Vishay Siliconix N-Channel Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12.5 0.015 @ VGS = 4.5 V

SI4390DY-T1-E3

Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0095 at VGS = 10 V 12.5 0.0135 at VGS = 4.5 V 10.5 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses

SI4390DY

Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.5 0.0135 at VGS = 4.5 V 10.5 • Extremely Low Qgd WFET Technology for Switching Losses • TrenchFET® Power MOSFET

SI4390DY-T1-E3

Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0095 at VGS = 10 V 12.5 0.0135 at VGS = 4.5 V 10.5 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses

74086

Abstract: 4435 m 9583 siliconix 4435 AN609 Si4390DY 49368
Contextual Info: Si4390DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4390DY

Contextual Info: SPICE Device Model Si4390DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4390DY

Abstract: Si4390DY-T1
Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 12.5 0.0135 @ VGS = 4.5 V

Si4390DY

Abstract: 3338S
Contextual Info: SPICE Device Model Si4390DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4390DY

Contextual Info: Si4390DY Vishay Siliconix N-Channel Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.5 0.0135 at VGS = 4.5 V 10.5 • Extremely Low Qgd WFET Technology for Switching Losses • TrenchFET® Power MOSFET

Contextual Info: MIC2169 Micrel MIC2169 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169 is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in a small MSOP-10 package. The MIC2169 allows compact DC/DC solutions

MIC2169BMM

Abstract: MIC2169YMM MSOP-10 SD103BWS Si4800 Si4804BDY IRF7821 MIC2169 mic2169 pwm
Contextual Info: MIC2169 Micrel MIC2169 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169 is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in a small MSOP-10 package. The MIC2169 allows compact DC/DC solutions

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . THERMASIM Online Thermal Simulation Thermal Design Solutions INTRODUCTION As functionality and complexity increases in today’s electronic devices and systems, achieving performance within power budget constraints and maximizing efficiencies requires a thorough understanding of thermal characteristics and managing

k 2645 MOSFET

Abstract: RF7821 irf7821 MIC2169 MIC2169BMM MIC2169YMM MSOP-10 SD103BWS Si4800 Si4804BDY
Contextual Info: MIC2169 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169 is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in a small MSOP-10 package. The MIC2169 allows compact DC/DC solutions with a minimal external component count and cost.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

thermal SIMULATION

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . SILICONIX - On-Line Tool for Thermal Simulation AND TEC I INNOVAT O L OGY Online Thermal Simulation N HN Thermasim O 19 62-2012 Thermal Design Solutions INTRODUCTION As functionality and complexity increases in today’s electronic devices and systems, achieving performance

Contextual Info: MIC2169A Micrel MIC2169A 500kHz PWM Synchronous Buck Control IC General Description Features The MIC2169A is a high-efficiency, simple to use 500kHz PWM synchronous buck control IC housed in a small MSOP10 package. The MIC2169A allows compact DC/DC solutions

STM9435

Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23