SI4164DY Search Results
SI4164DY Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4164DY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A 8-SOIC | Original | 10 |
SI4164DY Price and Stock
Vishay Intertechnologies SI4164DY-T1-GE3Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4164DY-T1-GE3 | 2,500 |
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SI4164DY-T1-GE3 | Tape & Reel | 52 Weeks | 2,500 |
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SI4164DY-T1-GE3 | 213 |
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SI4164DY-T1-GE3 | Cut Tape | 2,500 |
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| SI4164DY-T1-GE3 | Tape & Reel | 2,500 |
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| SI4164DY-T1-GE3 | Tape & Reel | 2,500 |
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| SI4164DY-T1-GE3 | Bulk | 1 |
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SI4164DY-T1-GE3 | Reel | 2,500 |
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SI4164DY-T1-GE3 | 95 |
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SI4164DY-T1-GE3 | 1,038 |
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SI4164DY-T1-GE3 | 54 Weeks | 2,500 |
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SI4164DY-T1-GE3 | 7,045 |
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SI4164DY-T1-GE3 | 53 Weeks | 2,500 |
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Vishay Siliconix SI4164DY-T1-GE3MOSFET, N-CH, VDS 30V;RDS(ON) 0.0026OHM;ID 30A;SO-8;PD 6.0W;VGS +/-20V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4164DY-T1-GE3 | Bulk | 2,500 |
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Get Quote | ||||||
Vishay Intertechnologies SI4164DYT1GE3N-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4164DYT1GE3 | 2,500 |
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Vishay Huntington SI4164DY-T1-GE3MOSFET N-CH 30V 30A 8-SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4164DY-T1-GE3 | 79,820 |
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SI4164DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Si4164DY-T1-GE3Contextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) |
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si4164dysi4164dy-t1-ge318-jul-08 | |
AN609Contextual Info: Si4164DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, |
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si4164dyan60913-aug-08 | |
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Contextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) |
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si4164dysi4164dy-t1-ge32011/65/eu2002/95/ec+1 | |
Si4164DY-T1-GE3
Abstract: si4164
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si4164dysi4164dy-t1-ge311-mar-11si4164 | |
6554aContextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) |
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si4164dysi4164dy-t1-ge32011/65/eu2002/95/ec+2 | |
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Contextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) |
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si4164dysi4164dy-t1-ge311-mar-11 | |
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Contextual Info: SPICE Device Model Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4164dys-81899rev25-aug-08 | |
si41Contextual Info: SPICE Device Model Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4164dy18-jul-08si41 | |
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Contextual Info: SPICE Device Model Si4164DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si4164dy2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) |
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si4164dysi4164dy-t1-ge32002/95/ec2011/65/eu+2 | |
6142E
Abstract: elektronik DDR SP2996B XRP6142EL0-5-F FDS6570
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xrp61426142eelektronik ddrsp2996b+2 | |
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
220v AC voltage stabilizer schematic diagram
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ad9272p462-ndlng295lfcp2up463-nd+11 | |
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Contextual Info: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy |
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1n4148ws-v500mabat54a-v200ma+5 | |
Diode SOT-23 marking 15d
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diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8 | |