SI2365EDS Search Results

si2365eds

Abstract: SI2365EDS-T1-GE3
Contextual Info: Si2365EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0320 at VGS = - 4.5 V - 5.9 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 a Qg (Typ.) 13.8 nC TO-236 (SOT-23) G APPLICATIONS

SI2365

Abstract: Si2365EDS SI2365EDS-T1-GE3 P6 marking
Contextual Info: New Product Si2365EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0320 at VGS = - 4.5 V - 5.9 0.0410 at VGS = - 2.5 V - 5.2 0.0675 at VGS = - 1.8 V - 4.3 a Qg (Typ.) 13.8 nC TO-236 (SOT-23)

Contextual Info: SPICE Device Model Si2365EDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of

Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,