SI2312CDS Search Results

Si2312CDS

Contextual Info: SPICE Device Model Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si2312CDS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

SI2312cDS

Abstract: AN609
Contextual Info: Si2312CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SI2312CDS

Abstract: SI2312bDS SI2312BDS-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix Si2312CDS vs. Si2312BDS Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

SI2312cDS

Abstract: S10-0641-Rev SI2312CDS-T1-GE3
Contextual Info: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_00 Seiko Instruments Inc., 2013 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage

Contextual Info: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_01 Seiko Instruments Inc., 2013-2014 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

glucose

Contextual Info: Handheld Electrochemical Blood Glucose Meter Table of Contents DATA INTERFACE, IrDA. 3 DATA INTERFACE, USB. 4