SI2312BDS-T1-GE3 Search Results
SI2312BDS-T1-GE3 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| IXF1002EDT-G |
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IXF1002 - Dual Port Gigabit Ethernet Controller |
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| AM79C961AVI |
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Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless |
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| IXF1002ED |
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IXF1002ED - Dual Port Gigabit Ethernet Controller |
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| IXF1002EDT |
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IXF1002 - Dual Port Gigabit Ethernet Controller |
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| IXF1002ED-G |
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IXF1002ED - Dual Port Gigabit Ethernet Controller |
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SI2312BDS-T1-GE3 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI2312BDS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3.9A SOT23-3 | Original | 8 |
SI2312BDS-T1-GE3 Price and Stock
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Vishay Siliconix SI2312BDS-T1-GE3MOSFET N-CH 20V 3.9A SOT23-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2312BDS-T1-GE3 | Reel | 6,000 | 3,000 |
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SI2312BDS-T1-GE3 | 57,000 | 3,000 |
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Vishay Intertechnologies SI2312BDS-T1-GE3N Channel Mosfet, 20V, 5A, To-236; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850Mv; Msl:- Rohs Compliant: Yes |Vishay SI2312BDS-T1-GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2312BDS-T1-GE3 | Cut Tape | 3,000 |
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SI2312BDS-T1-GE3 | Reel | 57,000 | 3,000 |
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Buy Now | |||||
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SI2312BDS-T1-GE3 | 998 |
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SI2312BDS-T1-GE3 | 1,437 |
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SI2312BDS-T1-GE3 | Reel | 3,000 |
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SI2312BDS-T1-GE3 | 3 |
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SI2312BDS-T1-GE3 | 3,000 |
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SI2312BDS-T1-GE3 | 3,000 |
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SI2312BDS-T1-GE3 | 42,750 | 1 |
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Others SI2312BDST1GE3AVAILABLE EU |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2312BDST1GE3 | 6,750 |
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Get Quote | |||||||
Vishay Intertechnologies SI2312BDST1GE3N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2312BDST1GE3 | 54,000 |
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Get Quote | |||||||
VBsemi Electronics Co Ltd SI2312BDS-T1-GE3Transistor: N-MOSFET; unipolar; 20V; 6A; 0.028ohm; 2.1W; -55+150 st.C; SMD; SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2312BDS-T1-GE3 | 100 | 1 |
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