SUD30N Search Results

transistor c 6093

Abstract: c 6093 AN609 SUD30N03-30
Contextual Info: SUD30N03-30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

70925

Abstract: SUD30N03-30
Contextual Info: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit Schematic • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

48782

Abstract: SUD30N03-30
Contextual Info: SUD30N03-30 N-Channel Enhancement-Mode Transistor Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SUD30N03-30

Contextual Info: SUD30N03-30 N-Channel Enhancement-Mode Transistor Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUD30N04-10 Siliconix N-Channel 40-V D-S , 175°C MOSFET Product Summary V(BR)DSS (V) 40 Id (A) rDS(on) (£2) 0.010 @ V gs = 10 V 0.014 @ VGs = 4.5 V 30a 30a D Q TO-252 Drain Connected to Tab G D S Top View Order Number: SUD30N04-10 6 S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY Id r DS(on) (-2) V (BR)DSS (V ) (A) 0 .0 1 0 @ V GS = 10 V 30 a 0.014 @ VGS = 4.5 V 30 a 40 D Q TO-252 o Jl nr G D Drain C onnected to Tab S Top View o s O rder Number:

SUD30N03-30

Abstract: 70268
Contextual Info: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUD30N04-10

Contextual Info: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252

SUD30N04-10

Abstract: a2057
Contextual Info: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET Order Number: SUD30N04-10

The subcircuit model was extracted and optimized

Abstract: SUD30N
Contextual Info: SPICE Device Model SUD30N N-Channel Enhancement-Mode Transistor Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

SUD30N03-30

Contextual Info: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

AN609

Abstract: SUD30N04-10
Contextual Info: SUD30N04-10_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUD30N03-30

Contextual Info: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUD30N03-30 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUD30N03-30 Siliconix N-Channel 30-V D-S , 175_C MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "30 0.045 @ VGS = 4.5 V "25 D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252

Audio Power Amplifier MOSFET TOSHIBA

Abstract: TOSHIBA DIODE CATALOG IRF7313 chemicon oscon 25PS100JM12 Nippon capacitors
Contextual Info: XC9213 Series ETR0505_001 Synchronous Step-Down DC/DC Controller IC - Input Voltage : 25V ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9213 series is N-ch & N-ch drive, synchronous, step-down DC/DC controller IC with a built-in bootstrap driver circuit.

MTD20NO6HD

Abstract: mbro530 MBRO530T1 PC40-EPC17 LT1693 inverter 12v to 220 ac mosfet based CPHS-EFD20-1S-10P marking t1c SMD403 2N7002 PHILIPS MARKING
Contextual Info: LTC1693 High Speed Single/Dual MOSFET Drivers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1693 family drives power MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance. Dual MOSFET Drivers in SO-8 Package

irf3205 mosfet transistor

Contextual Info: LT1339 High Power Synchronous DC/DC Controller U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 1339 is a high power synchronous current mode switching regulator controller. The IC drives dual N-channel MOSFETs to create a single IC solution for high

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

40A 48v charger Schematic Diagram

Abstract: 12v step-down transformer operations files AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter bjt Self-Oscillating Flyback Converters ZVS Royer Self-Oscillating mobile charger 24V 20A SIEMENS battery charger spice model SFH213 fluorescent lamp driver 4W T5 3.1v to 350v ZENER DIODE
Contextual Info: LINEAR TECHNOLOGY NOVEMBER 2000 IN THIS ISSUE… COVER ARTICLE 3MHz Synchronous Boost Regulators Save Critical Board Space in Portable Applications . 1 Mark Jordan Issue Highlights . 2 LTC in the News . 2

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

SI3456DV

Abstract: SI4420DY SI4874DY SUD50N03 lmt zener
Contextual Info: Application Report SLVA135 - MAY 2003 A Step-By-Step Design Approach to TPS2300/01/11/20/21/30/31 Hotswap Controllers Heping Dai PMP Systems Power ABSTRACT The TPS2300/01/10/11/20/21/30/31 hotswap controllers allow safe board insertion and removal from a live backplane. With the current-sensing resistor RSENSE and the

T0252

Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Contextual Info: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)