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STDM80 Datasheets (1)

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Samsung Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
STDM80		Samsung Electronics	STD80 0.5 Micron STD80 Standard Cell Library Supply Voltage (V) = 5 Technology(micron) = 0.5micron	Original	PDF	3.22MB	982

STDM80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TDA 7378 Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology Contextual Info: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior	Original	std80/stdm80 notice10 tda 7378 tda 7822 +8block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book std-80 4856 a 14 pin dip w908 lsi cmos technology	PDF
FD2S Abstract: STD80 74XX STDL80 STDM80 half adder 74xx FD1S IVCD11 transistor 131 74xx ttl Contextual Info: Intrduction to STD80/STDM80 1 Table of Contents Library Description. 1-1 Features. 1-1	Original	std80/stdm80 fd2s std80 74xx +7stdl80 stdm80 half adder 74xx fd1s ivcd11 transistor 131 74xx ttl	PDF
FD2S Abstract: ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649 Contextual Info: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior	Original	std80/stdm80 p1149 fd2s ix 3368 +8ao222 chapter 4 ao333 std80 stdm80 jtag samsung fd6s samsung 649	PDF
Contextual Info: ASIC PRODUCTS FUNCTION GUIDE 2. CMOS STANDARD CELL STD80/STDM80/STDL80 Product Specification STD80 Series STDM80 Process tech noo gy STDL80 0.5 /m HCMOS double-/triple-layer metal Gate delay 0.18ns 0.25ns 0.20ns 5V 3.3V 3.0V 3.3V(3.0V) 5V-to-3.3V 3.3V-ÍO-5V	OCR Scan	std80/stdm80/stdl80 std80 stdm80 stdl80	PDF
74152 PIN DIAGRAM Abstract: application of ic 74153 A022A 74373 verilog 74373 cmos dual s-r latch 74240T LN 741 T749 Contextual Info: KGL80 ^ ^ ^ ^ ^ ^ ^ ^ jE L E C T R O N i Gate Array Library 0.5um 3.3V CMOS Process PRELIMINARY Library Description KG L80 is a 0 .5 n m 3 .3 V C M O S gate array library supporting d ouble-layer o r triple-layer metal interconnection options. This process is optim ized for	OCR Scan	kgl80 vss30p vss50 74152 pin diagram +7application of ic 74153 a022a 74373 verilog 74373 cmos dual s-r latch 74240t ln 741 t749	PDF
8-bit johnson Abstract: verilog code for johnson counter 4 to 2 priority encoder modulo 16 johnson counter AD1032 phbx T74153 16 bit ripple adder verilog code for barrel shifter SEC 022D Contextual Info: KG80/KGM 80 Gate Array Library 0.5nm 5V CMOS Process PRELIMINARY Library Description SEC ASIC offers KG80 5V gate array family and KGM80 3.3 V gate array family. KG80 and KGM80 are 0.5 Am CMOS processes supporting double-layer or triple-layer metal interconnection options.	OCR Scan	kg80/kgm kgm80 8-bit johnson verilog code for johnson counter +84 to 2 priority encoder modulo 16 johnson counter ad1032 phbx t74153 16 bit ripple adder verilog code for barrel shifter sec 022d	PDF
STD80 Contextual Info: ELECTRICAL CHARACTERISTICS OUTPUT DRIVE CAPABILITIES OUTPUT DRIVE CAPABILITIES IV Characteristics VDD = 5V, TA = 25°C, Typical Process IOH [mA] IOL [mA] 157 150 POB24 125 185 175 POB24 150 POB20 125 POB16 POB20 100 POB16 100 POB12 75 POB12 50 75 POB8 POB4	Original	pob20 pob24 pob16 pob12 +2plob16 std80	PDF