POB20 Search Results

STD80

Contextual Info: ELECTRICAL CHARACTERISTICS OUTPUT DRIVE CAPABILITIES OUTPUT DRIVE CAPABILITIES IV Characteristics VDD = 5V, TA = 25°C, Typical Process IOH [mA] IOL [mA] 157 150 POB24 125 185 175 POB24 150 POB20 125 POB16 POB20 100 POB16 100 POB12 75 POB12 50 75 POB8 POB4

TDA 7378

Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
Contextual Info: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

tl 0741

Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor
Contextual Info: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2

TDA 9361 PS

Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
Contextual Info: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device

FD2S

Abstract: STD80 74XX STDL80 STDM80 half adder 74xx FD1S IVCD11 transistor 131 74xx ttl
Contextual Info: Intrduction to STD80/STDM80 1 Table of Contents Library Description. 1-1 Features. 1-1

3,6v sl-386

Abstract: transistor SL-100 tda 9592 FD6S ao21 KG80 KGM80 equivalent transistor S 2000N CL 473 kt 501
Contextual Info: D • A • T • A • B • O • O • K KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

Contextual Info: MICROELECTRONICS Exc»Mine* in 6* XL24E805 4-Bit Microcontroller KEY FEATURES OVERVIEW Cost-effective 4-bit microcontroller CMOS process for low current drain Low voltage, single power supply — VD D -2.5~5.5V 8192 bytes ROM 256 x 4 bits general-purpose RAM

TAG 8734

Abstract: samsung 922 pinout schematic diagram display samsung transistor equivalent book FOR A 1941 samsung schematics processor samsung inverter board 7429 TTL HERCULES Graphics Controller lem HA 10000 LPG CRT Power Supply
Contextual Info: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2

TDA 5660 P

Abstract: sj 2258 PS 9829 WL 10-9123 tda 3377 TDA 5735 tda 7294 pci ck16 Q 371 Transistor TE 555-1 TDA 4920
Contextual Info: STD90/MDL90 0.35µm 3.3V CMOS Standard Cell Library for Pure Logic/MDL Products STD90/MDL90 0.35µm 3.3V CMOS Standard Cell Library for Pure Logic/MDL Products Data Book  2000 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

CL 2182

Abstract: CL 1221 cl 5403 A 1908 SL 2042 CMOS 4039
Contextual Info: INPUT BUFFERS Cell List Cell Name Function Description PIC/PICD/PICU 1.8V Interface CMOS Level Input Buffers PMIC/PMICD/PMICU 2.5V Interface CMOS Level Input Buffers PHIC/PHICD/PHICU 3.3V Interface LVCMOS Level Input Buffers PTIC/PTICD/PTICU 3.3V-tolerant for 1.8V Interface CMOS Level Input Buffers

Contextual Info: Electrical Characteristics 2 Contents DC Electrical Characteristics . 2-1 Input Buffer DC Curves. 2-5

transistor 18971

Abstract: STD90 LD1A pci ck16 80C51 MDL90 what about 1553 bus top 249 yn asic 1605 Quartz resonator 33mhz
Contextual Info: Introduction 1 Table of Contents 1.1 Library Description. 1-1 1.2 Features. 1-2

TDA 3619

Abstract: TDA 9340 Data sheet TDA 3619 tda 2888 0428 ci an 7591 102-060 AN 7591 POWER AMPLIFIER inverter SK 40037 TDA 810 amplifier tda 8841
Contextual Info: Revision History - 1’st Edition: October 2000 - 2’nd Edition: April 2003 • Chapter 1: Introduction • Chapter 2: DC Electrical Characteristics Recommended Operating Conditions • Chapter 3: Primitive Cells • Chapter 5: Complied Memories STDL131

tda 9592

Abstract: TDA 2310 verilog code for Modified Booth algorithm tda 7830 TDA 8344 sl 7221 KGL80 AO33 FD2S
Contextual Info: D • A • T • A • B • O • O • K KGL80 0.5µm 3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KGL80 0.5µm 3.3V Gate Array Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

top 261 yn

Abstract: ARM9TDMI samsung display port verilog code for decimation filter TAG 8952 Bi-Directional P-Channel LPG CRT Power Supply schematic diagram samsung led SK 9080 verilog code for UART with BIST capability
Contextual Info: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2

sh 2089

Abstract: 925 590-2 STD130 TF 2309 CL 0805 2.4964
Contextual Info: INPUT BUFFERS Cell List Cell Name Function Description PIC/PICD/PICU 1.8V Interface CMOS Level Input Buffers PMIC/PMICD/PMICU 2.5V Interface CMOS Level Input Buffers PHIC/PHICD/PHICU 3.3V Interface LVCMOS Level Input Buffers PTIC/PTICD/PTICU 3.3V-tolerant for 1.8V Interface CMOS Level Input Buffers

TDA 3619

Abstract: Data sheet TDA 3619 TDA 8701 AN star delta FORWARD / REVERSE WIRING CONNECTION tda 9592 OA2222L TDA 810 amplifier sm 4109 TAG 8907 TDA audio power amplifier
Contextual Info: Revision History Based on Hard Copy . - 1’st Edition(V1.0) : April. 2003 • Chapter 1 : Introduction • Chapter 2 : DC Electrical Characteristics(Recommended Operating Conditions) • Chapter 3 : Primitive Cells • Chapter 5 : Compiled Memories STDL130