SS100 Search Results

ss100 transistor

Abstract: SS100 ks18 smd ss12 smd diode ss12 KS100 KS12 KS13 KS14 KS15
Contextual Info: Diodes SMD Type Schottky Rectifiers KS12 - KS100 SS12 - SS100 DO-214AC(SMA) Features Unit: mm 3.93 3.73 4.597 3.988 Glass passivated junctions. 1.575 1.397 High current capability, low VF. 2.896 2.489 1 2 1.67 1.47 For use in low voltage, high 2.38 2.18

Contextual Info: Product specification KS12 - KS100 SS12 - SS100 DO-214AC(SMA) Features Unit: mm 3.93 3.73 4.597 3.988 Glass passivated junctions. 1.575 1.397 High current capability, low VF. 2.896 2.489 1 2 1.67 1.47 For use in low voltage, high 2.38 2.18 5.49 5.29 5.283

MCH3307

Abstract: MCH5836 SS10015M
Contextual Info: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)

SS1001

Abstract: MCH5837 mosfet yb SS10015M TA72
Contextual Info: MCH5837 Ordering number : ENA0781 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M

Contextual Info: CPH5848 Ordering number : EN8690 SANYO Semiconductors DATA SHEET CPH5848 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Applications • DC / DC converters. Features • Composite type with a P-Channel Sillicon MOSFET MCH3306 and a Schottky Barrier Diode (SS10015M)

SS161A

Contextual Info: Solid State Sensors Surface Mount Digital Position Sensors SS100 Series The temperature compensated Hall effect sensor consists of a quad Hall sensing element in a square integrated circuit chip, which is then encapsulated in a glass-filled thermoset molding material.

ECSP1608-4

Abstract: SS1003EJ 7033a
Contextual Info: SS1003EJ 注文コード No. N 8 1 5 7 A 三洋半導体データシート 半導体ニューズ No.N8157 をさしかえてください。 SS1003EJ ショットキバリアダイオード 30V1A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。

Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20120323-C PROD. NAME SHIELDED SMD POWER INDUCTOR ABC'S DWG NO. SS1005□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance Code C B F D H D m/m m/m

Contextual Info: SS10015M Ordering number : ENN7979 Schottky Barrier Diode SS10015M 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.32V) (IF=0.5A, VF max=0.35V).

86886

Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
Contextual Info: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)

Contextual Info: SPECIFICATION FOR APPROVAL REF. : PROD. NAME SS1005□□□□L□-□□□ ABC'S DWG NO. Shielded SMD Power Inductor REV. 20131004-E PAGE 1 A 101 Ⅰ﹒Configuration and dimensions： Marking Inductance Code C B F D H D G E I I PCB Pattern Unit：m/m

SS100

Abstract: AIE MAGNETICS
Contextual Info: SS100 Series Solid State Sensors S urface M ount Digital P osition S ensors The tern pei ature compensated Hall effect sensor consists of a quad Hall sensing elem ent in a squaie integrated circuit chip, which is then encapsulated in a glass-filled thermoset m olding mateiial.

SS166A

Contextual Info: Solid State Sensors SS100 Series Surface Mount Digital Position Sensors FEATURES • Quad Hall design virtually eliminates mechanical stress effects • Temperature compensated magnetics • Bipolar, unipolar, latching magnetics • Super high sensitivity available

SS10015M

Abstract: 138SF 15VIO sanyo SS10015M
Contextual Info: SS10015M 注文コード No. N 7 9 7 9 三洋半導体データシート N ショットキバリアダイオード SS10015M 15V1A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。

"Marking SC"

Abstract: SS1003M
Contextual Info: SS1003M Ordering number : ENN8347 SS1003M Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small Switching noise. Low forward voltage(IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).

ECSP1608-4

Abstract: SB1003EJ SB1003M SS1003EJ SS1003M 16084 ecsp 1608-4 PACKAGE sanyo
Contextual Info: PRODUCT INFORMATION Vol.180 PicoSBD One Ampere-Rated Two-Terminal Leadless Schottky Barrier Diode Series Developed New devices achieve the industry's highest rated current of 1 A in a 1608 size device SS1003EJ, SB1003EJ, SS1003M and SB1003M Overview The market for miniature portable equipment powered by rechargeable batteries, equipment such as

Contextual Info: SPECIFICATION FOR APPROVAL REF. : PROD. NAME SS1003□□□□L□-□□□ ABC'S DWG NO. Shielded SMD Power Inductor REV. 20140214-C PAGE 1 A Ⅰ﹒Configuration and dimensions： Marking Inductance code C B F D E H D G I I PCB Pattern Unit：m/m A

MCH5846

Abstract: SS10015M CPH5846 MCH3309
Contextual Info: CPH5846 注文コード No. N 8 6 8 8 三洋半導体データシート N CPH5846 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタ MCH3309 とショットキバリアダイオード(SS10015M)を 1 パッケージに

ss14 do-214ac

Abstract: SS1V 24 DO-214AC SS100 SS13 do-214ac
Contextual Info: JG D SS12 O thru SS100 1.0 AM P. SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE RA N G E 20 to 100 Volts CURRENT 1.0 Ampere S M A /D O - 2 1 4 A C * FEATURES ^_ H_^ * Metal to silicon rectifier, majority carrier conduction i J [ — i- \ * l [j \ l i

buzzer 5V DC

Abstract: vt6 transistor ACTIVE buzzer Piezo Buzzer 1KHz buzzer-16 5V piezo buzzer MSS1002 continous buzzer
Contextual Info: M OSEL SS1002 Speech Synthesizer Voice ROM FEATURES DESCRIPTION • Single power supply can operate at 2 .4 V through 6V. The M SS1002 is a single-chip synthesizing CM OS VLSI that can synthesize voice up to 10 seconds us­ ing the MOSEL qualified coding method.

ss100 transistor

Abstract: SS100 transistor ss100 SS13 SS14 SS15 SS16 SS18
Contextual Info: CURRENT 1.0Ampere VOLTAGE 20 to 100 Volts SS12 THRU SS100 Features • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · For surface mount applications · Guard ring for overvoltage protection

ss20 SOD-123F marking

Abstract: SS20 SS80 RECTRON MARKING CODE FOR 2010
Contextual Info: SS20L THRU SS100L SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage drop High current capability High speed switching High surge capabitity

D1004

Abstract: MCH3405 MCH5811 SS10015M
Contextual Info: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)

Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20090626-A PROD. NAME ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR SS1003□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance code C B F m/m m/m m/m m/m