SQ9945AEY Search Results

AN609

Abstract: SQ9945AEY
Contextual Info: SQ9945AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

81559

Abstract: SQ9945AEY-T1 SQ9945AEY-T1-E3 SQ9945AEY 74499
Contextual Info: SQ9945AEY Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 0.080 ID (A) ± 3.7 AEC-Q101 RELIABILITY Configuration Dual • Passed all AEC-Q101 Reliability Testing D2 D1 SO-8

74499

Contextual Info: SQ9945AEY Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 0.080 ID (A) ± 3.7 AEC-Q101 RELIABILITY Configuration Dual • Passed all AEC-Q101 Reliability Testing D2 D1 SO-8

Si9945AEY-T1

Abstract: SI9945 SQ9945AEY-T1 AECQ101 SI9945AEY Si9945AEY SPICE Device Model
Contextual Info: Si9945AEY/SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated

SQ9945AEY

Abstract: Dual N-Channel 60-V D-S
Contextual Info: SPICE Device Model SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SQ9945AEY-T1

Abstract: SI9945 AECQ101 Si9945AEY-T1 a2045
Contextual Info: Si9945AEY/SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated

AECQ101

Abstract: SQ9945AEY SQ9945AEY-T1 74499
Contextual Info: SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated

sum45n25

Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
Contextual Info: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)

Contextual Info: HVAC Climate Control Table of Contents AIR FLOW CONTROL, Blower Control. 3 AIR FLOW CONTROL, Vent Control. 5