SMP25N06 Search Results

Contextual Info: SMP25N06 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)40 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)85 Minimum Operating Temp (øC)

SMP25N06

Abstract: SMP25N05 25n05 sm 4109 A2575 25n06
Contextual Info: SMP25N06, SMP25N05 H S gäS N-Channel Enhancement Mode Transistors T Q -2 2 0 A B T O P VIEW PRODUCT SUMMARY PA R T N UM BER V BR DSS rDS(ON) • d (V) (il) (A) SMP25N06 60 0.060 25 SMP25N05 50 0.060 25 1 2 3 GATE DRAIN (C on n e cted to TAB) SOURCE ABSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

SMP25N06

Abstract: si9112 SI9112DJ
Contextual Info: S Ì91 1 2 «T-Siliconix ^ ^9 in c o rp o ra te d I I m High-Voltage Switchmode Controller FEATURES • 9 to 80 V Input Range • Current-mode Control • High Efficiency Operation > 80% • Internal Start-up Circuit • H igh-speed, Source-Sink Output Drive

SMW60N06-18

Abstract: SMP50N05 SMP25N06 SMW14N50F smu10p05 SMP60N06-18 SMP4N60 SMP20P10 SMP20N20 SMW45N10
Contextual Info: - f X£ ft Vd s sa £ ft Vg s m. *£ Ta=25*C Pd Id loss I gss Vg s th) SMP3N5QF SILICONIX N SM P 3 P 1 0 SILICONIX P roin * /CH * /CH CnA) Vg s (V) 500 ±20 2.5 48 ±500 ±20 -100 ±20 -3 20 ±500 ±20 (V) (V) m (A) I d (on) g fs Ciss Coss Crss V g s =0

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

1811PA250-3C8

Abstract: 1811pl00-3c8 1811PL003C8 SMP25N06 1811PA2503C8 ferroxcube toroid 1811PL pot core inductor winding transistor a1m Si9110
Contextual Info: AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulse-width modulation PWM controllers are significant. First, by using a BiC/DMOS

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

SMP25N06

Abstract: 1811PA250-3C8 1811PL00 1N4148 1N5822 AN703 Si9110 Si9111 TL431C toroidal transformer 120v
Contextual Info: AN703 Siliconix Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and batteryĆpowered equipment, the advantages of MOS over bipolar technology for pulseĆwidth modulation PWM controllers are significant.

optocoupler H-BRIDGE

Abstract: Si9950DY SMP25N06 mospower applications handbook SMP20P10 J107 DIODE SMP40N10 AN706 CR100 Siliconix JFET application note
Contextual Info: AN706 Siliconix Motor Drive Circuits Using the D469A James A. Harnden Introduction Many applications operate MOSPOWER devices as on/off switches. In applications where device switching speed is of less concern and the MOSPOWER device's gate capacitance Ciss is sufficiently low, they may be

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

SMP16P06

Abstract: SMM14N65 SMW60N06-18 SMP25N06 SMW60N10 SMP60N06-18 MDD100B SMM24N40 SMM40N20 SMV1P06
Contextual Info: CXSiliconix in c o r p o r a te d Selector Guide Plastic Packages N-Channel Cont’d N-Channel V(BÇDSS (A) Part Number >d s ( o n ) (Û ) V(BRJDSS r D S(O N ) Id (A) ( il) Part Number 650 5.8 1.5 VNT008D1 50 30 0.040 650 5.0 2.0 VNT009D1 50 25 0.060 BUZ11A1

optocoupler H-BRIDGE

Abstract: J107 DIODE SMP25N06 mospower applications handbook SI9950DY SMW14N50F SMP20P10 SMP30N10 si9950 SMP8N50F
Contextual Info: AN706 Motor Drive Circuits Using the D469A James A. Harnden Introduction Many applications operate MOSPOWER devices as on/off switches. In applications where device switching speed is of less concern and the MOSPOWER device’s gate capacitance Ciss is sufficiently low, they may be

SMP25N06

Abstract: 1811pl00-3c8 ferroxcube 43 toroid core equivalent diode for R2C 1811P transistor a1m Si9110 1811PL Siliconix AN703 A1m anode
Contextual Info: AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulse-width modulation PWM controllers are significant. First, by using a BiC/DMOS

IC TL431c opto

Abstract: 1811PL00 SMP25N06 Si9110 wound bifilar SMP25N A1m anode AN703 Si9111 IC TL431c 12v
Contextual Info: AN703 Vishay Siliconix AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulsewidth modulation PWM controllers are significant. First, by

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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