SF10BG Search Results

SF10AG

Abstract: SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG
Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward

SF10BG

Abstract: SF10DG SF10FG SF10GG SF10HG SF10JG SF20HG
Contextual Info: LITE-ON SEMICONDUCTOR SF10BG thru SF10JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 1.0 Ampere SUPER FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability

Contextual Info: LITE ON POWER SEMICONDUCTOR SF10BG thru SF10JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 1.0 Ampere SUPER FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability

Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward

SF10

Abstract: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG
Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward

SF10BG

Abstract: SF10DG SF10FG SF10GG SF10HG SF10JG SF20HG
Contextual Info: LITE-ON SEMICONDUCTOR SF10BG thru SF10JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 1.0 Ampere SUPER FAST GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability

Contextual Info: SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward

DO-41

Abstract: DS24012 DO41
Contextual Info: SPICE MODELS: SF10AG SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Super-Fast Switching for High Efficiency Surge Overload Rating to 30A Peak

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: n in n c c u I N C iv O R /J P O C R A T j E SF10AG - SF10JG 1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER D Features X Glass Passivated Die Construction X Super-Fast Switching for High Efficiency X Surge Overload Rating to 30A Peak X Low Reverse Leakage Current

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

SF10AG

Abstract: SF10BG SF10CG SF10DG SF10FG SF10GG SF10HG SF10JG
Contextual Info: SF10AG–SF10JG Vishay Lite–On Power Semiconductor 1.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Ultra–fast switching for high efficiency High current capability and low forward voltage

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

Contextual Info: SF10AG-SF10JG Vishay Lite-On Power Semiconductor 1.0A Super-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • U ltra -fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and