S6516 Search Results

Contextual Info: G M 71V 65163A G M 71V S65163A L 4,196,304 WORDS x 16 BIT LG S e m ïc o n Co., Ltd. w w .,f c .i w . CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced

P241T

Abstract: MS65
Contextual Info: MOSEL / S6516 2K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 100ns Max. version The M OSEL M S6516 is a high performance, low power CM O S static RAM organized as 2048 words by 8 bits. The device supports easy memory expansion with an active

Contextual Info: •> GOULD AMI Semiconductors S6516 Preliminary Data Sheet 16,384 BIT 2048x8 STATIC CMOS RAM February 1985 Features □ Fast Access Time □ Low Power Standby □ Low Power Operation □ On-Chip Address Registers □ Low Voltage Data Retention -2 V □ Fully TTL Compatible Inputs

ms6516l

Abstract: MS6516L-10 MS6516L10PC 5PFE JR-101
Contextual Info: MOSEL- VITEUC M S6516 2K x 8 CMOS STATIC RAM Features Description • Available in 100ns Max. version ■ Automatic power-down when chip disabled ■ Low power consumption (L-version): S6516L - 385mW (Max.) Operating - 1 1 mW (Max.) Standby - 55jiW (Max.) Power-down

S-6516

Contextual Info: MOSEL M S6516 2K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 100 and 120 ns Max. versions The MOSEL S6516 is a high performance, low power CMOS static RAM organized as 2048 words by 8 bits. The device supports easy memory expansion with an active

MS6516L-10PC

Abstract: MS6516L10PC MS6516L-10 TNC2 MS65 MS6516 ms6516l
Contextual Info: MOSEL _ S6516 2K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 100ns Max. version The MOSEL S6516 is a high performance, low power CMOS static RAM organized as 2048 words by 8 bits. The device supports easy memory expansion with an active

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: GM71V65163A S65163AL LG Semicon Co.,Ltd. ’ 4,196,304 W ORDS x 16 BIT CM OS DYNAM IC RAM Description Pin Configuration The GM 71V S 65163A/AL is the new generation dynam ic RAM organized 4,196,304 words by 16 bits. The G M 71V(S)65163A/AL utilizes advanced

1kx1 static ram

Abstract: 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616
Contextual Info: HARRIS SEflICOND SECTOR i-/lyu/il t i j IfaE D • 43 05271 OOlSlTfl b ■ HS-65641/44/45RH HS-65646/48RH HARRIS PREVIEW Radiation Hardened Asynchronous 64K SOI CM O S Static RAM Family May 1988 Features • 1.2 Micron Radiation Hardened SOI CM O S 1 X106RAD Si