S6264 Search Results

C2238

Abstract: TMS626812
Contextual Info: TM S626412A , TM S626812A 2 0 9 7 1 5 2 B Y 4 -B IT B Y 2 -B A N K , 1 0 4 8 5 7 6 B Y 8 -B IT B Y 2 -B A N K S Y N C H R O N O U S D Y N A M IC R A N D O M -A C C E S S M E M O R IE S _ SMOS691A-JULY 1997 - REVISED OCTOBER 1997 SYNCHRONOUS

6264l

Contextual Info: M O SE L VTTEUC M S6264L 8 K x 8 CMOS STATIC RAM Features Description • Available in 70/100 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: S6264L — 467.5mW (Max.) Operating — 16.5mW (Max.) Standby — 500|iW (Max.) Standby

6264c

Abstract: Le89
Contextual Info: MOSEL _ S6264C 8K x 8 Low Power CMOS SRAM FEATURES DESCRIPTION • Available in 80/100/150 ns Max. The M O SEL M S6264C is a high performance, low power CM O S static RAM organized as 8192 words by 8 bits. The device supports easy m em ory expansion with both an

S693

Abstract: TMS626812
Contextual Info: S626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES S M O S 693-O C TO BE R 1997 TM S626412B D G EP A C K A G E TOP VIEW vcc [ 1 NC [ 2 SYNCHRONOUS CLOCK CYCLE TIME 44 ] V SS 43 ] NC

Contextual Info: 54E ]> • MOSEL D0D1310 =551 « M O V I NOSEL-VITELIC S6264A r 8K x 8 High Speed CMOS Static RAM Preliminary FEATURES DESCRIPTION • High-speed - 20/25/30 ns The M OSEL M S6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits

MS6264CLL-10

Contextual Info: 54E D ÜDD13ÔM *310 IMOVI MOSEL S6264C 8K x 8 Low Power CMOS SRAM MOSEL-VITELIC FEATURES DESCRIPTION • Available in 80/100/150 ns Max. The M OSEL M S6264C is a high performance, low power CM O S static RAM organized as 8192 words by 8 bits. The device supports easy memory expansion with both an

MS6264L-10PC

Abstract: MS6264L-70PC MS6264L-10FC MS6264L-10 MS6264L10FC ic 6264 6264 ttl ram S6264
Contextual Info: MOSEL- VITELIC M S6264 8 K x 8 C M O S STA TIC R A M Features Description • Available in 70 /10 0 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: M S6264L — 467.5m W (Max.) Operating — 16.5m W (M ax.) Standby — 5 00 h W (Max.) Standby

Contextual Info: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO S6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL S6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The

MS6264CLL-10

Abstract: MS6264CL-10 MS6264CLL-15 VDR 0047 MS6264CLL-80 ms6264cll MS6264C-80 MS6264CL-80 ZE10 ms6264cl-15
Contextual Info: MOSEL S6264C 8K x 8 Low Power CMOS SRAM FEATURES DESCRIPTION • Available in 80/100/150 ns Max. The MOSEL S6264C is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The device supports easy memory expansion with both an

Contextual Info: MOSEL S6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION >Available in 70/100 ns Max. >Automatic power-down when chip disabled • Lower power consumption: S6264 - 495mW (Max.) Operating - 82.5mW (Max.) Standby - 11 mW (Max.) Power Down S6264L - 467.5mW (Max.) Operating

Contextual Info: S626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS693 - OCTOBER 1997 S626412B DGEPACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses)

Contextual Info: S4E J> b3533Tl D0D1377 7SQ • MOVI MOSEL S6264 8K x 8 CMOS StaticRAM n O S E L - V l T E L I C FEATURES DESCRIPTION • Available in 70/100 ns Max. The MOSEL S6264 is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The

MS6264L-10PC

Abstract: MS6264L-10 MS6264-10PC MS6264L-70PC Mosel MS6264 MS6264L-10FC MS6264L-70FC MS6264-70PC r7777T MS6264L-70
Contextual Info: MOSEL S6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 70/100 ns Max. The M OSEL S6264 is a high performance, low power CM OS static RAM organized as 8192 words by 8 bits. The device supports easy m em ory expansion with both an active LOW chip enable (Et) and an active High chip

MS6264CLL-10

Abstract: MS6264Cl MS6264CLL
Contextual Info: MOSEL S6264C 8K x 8 Low Power CMOS SRAM FEATURES DESCRIPTION • Available in 80/100/150 ns Max. The MOSEL S6264C is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The device supports easy memory expansion with both an

Mosel MS6264

Abstract: S6264
Contextual Info: MOSEL S6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION • Available in 7 0 /1 0 0 ns M ax. T h e M O S E L M S 6 2 6 4 is a high perform ance, low power • Autom atic power-down when chip disabled C M O S static R A M organized as 8 1 9 2 words by 8 bits. The

Contextual Info: MOSEL S6264A 8K x 8 High Speed CMOS Static RAM Preliminary FEATURES DESCRIPTION • High-speed - 20/25/30 ns The MOSEL S6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates from a single 5 volt supply. It is built with

Contextual Info: MOSEL- VITEUC S6264N 8K x 8 CMOS STA TIC RAM WITH 3.3V OPERA TIONS Features Description • Available in 100 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: S6264NL — 165mW (Max.) Operating — 30jiW (Max.) Standby ■ TTL compatible interface levels

Contextual Info: S626402, TMS636402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS642 - FEBRUARY 1994 TMS6x6402-10 10 ns TMS6x6402-1212.5 ns TMS6x6402-15 15 ns 30 ns 35 ns 40 ns v Gc q [ 5 NC [ 6 Vs s q C 7 DQ1 [ 8 Vc c q E 9 NC C 10 NC [ 11

ic 8284

Abstract: s8204 S6285 S6264 CL 8264
Contextual Info: / i ^ -i ¿ 7 / 0 5 1 5 Am8284/8285 Binary Hexadecimal/BCD Decade Synchronous Up-Down Counters Description: Th e Am 8264 B in a ry H e xadecim al and the Am8285 BC D D ecade S y n ch ro n o u s U p /D o w n C o unters are fu n c tio n a lly , e le c tric a lly , and p in -fo r-p in an e q u iv a ­

MS6264L-10

Abstract: 6264-10 6264l MS6264-10
Contextual Info: MOSEL _ S6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION 1Available in 70/100 ns Max. «Autom atic power-down when chip disabled 1Low er pow er consumption: S6264 - 4 9 5 m W (Max.) Operating - 82.5m W (Max.) Standby - 11mW (Max.) Power Down S6264L

MS6264A25NC

Abstract: MS6264A-25SC MS6264A-20NC MS6264A20NC MS6264AL-20PC MS6264A-20RC MS6264A-20PC P28-2 MS6264A-25NC s286
Contextual Info: MOSEL S6264A 8K x 8 High Speed CMOS Static RAM Preliminary FEATURES DESCRIPTION • High-speed - 20/25/30 ns The MOSEL S6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates from a single 5 volt supply. It is built with

63911

Abstract: MS6264L-10
Contextual Info: M O S E L V ÏÏT E U C S6264L 8 K x 8 CMOS STATIC RAM Features Description • Available in 70/100 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: S6264L — 467.5mW (Max.) Operating — 16.5mW (Max.) Standby — 500|xW (Max.) Standby

Contextual Info: M O S E L VTTEUC S6264H 8K x 8 HIGH SPEED CMOS STATIC RAM Prelim inary Features Description • High-speed -1 5 /2 0 ns ■ Low Power dissipation: — 825mW Max. Operating — 550|iW (Max.) Power Down ■ 5V ± 10% supply ■ Fully static operation ■ TTL compatible I/O

tv nei schematics

Abstract: PCI1210 ScansUX7 DSP hearing aid TMS320 TMS320C67X PCI1221 TNETE2008 TNETE2101 TNETX3270
Contextual Info: <Previous M enu I 4 back ^ Te x a s In s t r u m e n t s NORTH A M ERIC AN EDITION A N UPDATE ON TEXA S INSTRUM ENTS SEM ICONDUCTO RS VOL. 14 ▼ NO. 7 ▼ DECEMBER 1997 Tl to provide Java-enabled DSP Solutions Already the wireless indus­ try’s leading platform, TI