SMOS642 Search Results

2U97

Contextual Info: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS642A- FEBRUARY 1994 - REVISED JUNE 1995 DGEPACKAGE TOP VIEW • Organization . . . 2M x 4 x 2 Banks • 3.3-V Power Supply (±10% Tolerance) • TWo Banks for On-Chip Interleaving

Contextual Info: TMS626402, TMS636402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS642 - FEBRUARY 1994 TMS6x6402-10 10 ns TMS6x6402-1212.5 ns TMS6x6402-15 15 ns 30 ns 35 ns 40 ns v Gc q [ 5 NC [ 6 Vs s q C 7 DQ1 [ 8 Vc c q E 9 NC C 10 NC [ 11

TMS6264

Abstract: TMS626402 CLOCK30 AND-02
Contextual Info: 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS642B - FEBRUARY 1994 - REVISED JUNE 1995 DGEPACKAGE TOP VIEW • Organization . . . 2M x 4 x 2 Banks • 3.3-V Power Supply (±10% Tolerance) • Two Banks for On-Chip Interleaving

TMS6264

Contextual Info: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS842A - FEBRUARY 1994 - REVISED JUNE 1995 • Organization . . . 2M x 4 x 2 Banks DGE PACKAGE TOP VIEW • 3.3-V Power Supply (±10% Tolerance) • Two Banks fo r On-Chip Interleaving

1993 synchronous dram jedec

Abstract: TMS626402 TMS626802 SDRAM 1994 Texas Instruments TMS6264
Contextual Info: 16-Megabit Synchronous DRAM Technical Reference ^ Texa s In s t r u m e n t s IMPORTANT NOTICE Texas Instruments Tl reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information