Photo-Thyristor
Contextual Info: SHARP S22MD2 Photothyristor Coupler • Olitine Dimensions ■ F eatures 1. Long distance between anode and cathode of photothyristor on the output side : 5.08mm 2. High repetitive peak OFF-state voltage V drm : MIN. 6 0 0 V 3. Low trigger current (Ift : MAX. 8mA
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s22md2000vrms13couplersphoto-thyristor |
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TLP645G
Abstract: S22MDIV TLP645J EE-CS20 S22MD1V S12MD1V S12ME1 S22MD2 TLP141G
Contextual Info: - 288- TLP645G S22MD2 " h - 50 6 - 400 600 150 150 2 - i >xm Vr m ft -k I h dV max / mA dt min 2 T. min typ* 5 / max n (V/raA) CC) 5 5 1 3.3/10 5* a » 2.5* - 3 0 - 1 0 0 1.35/30 Vr max It (V/m A) 1.3/100 » 1.3/100 1 0.2* 1 " » 2.5* - 5 5 - 1 0 0 5*
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tlp645gtlp645jbee-cs20tlp141g+6s12md1vs22md1vs22mdivee-cs20s12me1s22md2
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high power thyristor
Abstract: photothyristor
Contextual Info: S22MD2 S22MD2 Photothyristor Coupler • Features ■ Outline Dimensions 1. Long distance between anode and cathode of photothyristor on the output side : 5.08mm 2. High repetitive peak OFF-state voltage VDRM : MIN. 600V 3. Low trigger current ( IFT : MAX. 8mA
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s22md2high power thyristorphotothyristor |
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high power thyristor
Contextual Info: SHARP S22MD2 S22MD2 Photothyristor Coupler • Features ■ Outline Dimensions U nit : m m 1. Long distance between anode and cathode o f photothyristor on the output side : 5.08mm 2. High repetitive peak OFF-state voltage ( Vdrm : MIN. 600V ) 3. Low triggeT current
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photothyristor
Abstract: high power thyristor S22MD2
Contextual Info: S22MD2 Photothyristor Coupter S22MD2 Unit : mm 1. Long distance between anode and cathode 2. 3. 4. * of photothyristor on the output side : 5.08mm High repetitive peak OFF-state voltage (VDRM: MIN. 600V) Low trigger current (1~~ : MAX. 8mA at RG=20k~) High isolation voltage between input and
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s22md2wf02562i03io-20+2photothyristorhigh power thyristor
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high power thyristor
Abstract: photothyristor S22MD2 GK100
Contextual Info: S22MD2 S22MD2 Photothyristor Coupler • Features ■ Outline Dimensions 1. Long distance between anode and cathode of photothyristor on the output side : 5.08mm 2. High repetitive peak OFF-state voltage VDRM : MIN. 600V 3. Low trigger current ( IFT : MAX. 8mA
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s22md2high power thyristorphotothyristorgk100 |
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LT1560ED
Abstract: PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51
Contextual Info: SHARP Model No. List Model No. List • Infrared Emitting Diodes Model No. GL1F20 GL380 QL381 GL382 GL390 GL390V GL453 GL454 GL480 GL480Q GL4S3Q GL4800 GL460 GL461 GL4600 GL4610 GL4100 GL4200 GL4910 GL496 GL513F GL514 GL560 GL561 GL533 GL537 GL538 GL550 GL551
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gl1f20gl380ql381gl382+16gl390gl390vgl453gl454gl480gl480qlt1560edpq2wz51lt024mdgp1f31ts202t02gp1u801xlt022gp2l20lgp1u78rpq05dz51
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MOC5010
Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Contextual Info: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t
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1n62641n62651n62664n25a+144n29a4n32a4n38al14c2moc5010moc7811til31atil34atil903-1op8815scs11c3h2181til99til143
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LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Contextual Info: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66
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109-ngl1pr112gl1pr135gl1pr136+16gl1pr211gl1pr212gl3kg63gl3p201gl3p202gl3p305lq070t5bg01lm24p20lm162ks1bscr86l00ir2c07lm5q31ir3y29bbscu86l60lq6bwlq6bw506
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PAKAGE 5PIN SMD
Abstract: SPC817 PC8052 PC113 SHARP P1S29 S22MD1V "cross reference" PC817AC GL528V GP1U78R 664 6-pin sensor
Contextual Info: SHARP Quick Reference Guide Quick Reference Guide • Infrared Emitting Diodes Features Metal Outline mm Oramic Resin BastM old <f>3 ()53.2 GL360 Com pact QL371 Com pact o GL372 Com pact GL380 C om pact H ig h o u tp u t C om pact H ig h o u tp u t Arch type package
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gl360ql371gl372gl380+16gl390gl390vgl453gl454gl460gl461pakage 5pin smdspc817pc8052pc113 sharpp1s29s22md1v "cross referencepc817acgl528vgp1u78r664 6-pin sensor
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SHARP S201S02
Abstract: S201S01 s201s02 GP1A01 S201S04 is433 PC818u Sharp is433 SHARP S201S01 PC923 equivalent
Contextual Info: Product Change Notification Type of Notification: Discontinuation ISSUE DATE LAST BUY DATE NOTIFICATION NO. LAST SHIP DATE 25 November 2003 31 December 2003 20031125-01 March 31, 2004 This is to advise you that the following product s have been discontinued.
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gp1a01gp1a13rgp1a15gp1a17+15gp1a18gp1a20gp1a33rgp1a67hgp1a67lgp1a70rsharp s201s02s201s01s201s02s201s04is433pc818usharp is433sharp s201s01pc923 equivalent
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S202DS2
Abstract: S202DS4 S102DS2 SHARP S202DS4 s201s01 SHARP S201S02 s201s02 S202DS4 SHARP IS1621 pc111ys
Contextual Info: Obsolete Optoelectronics Products and Replacement Part Numbers Subcategory Model SHARP Replacement Part Detector BS100D BR100C Detector BS100G1 BR100C Detector BS120R BR120 Detector BS521 BR520 Detector GA100T802MZ GA100T802MZ1 Detector GA100T8R1MZ GA100T8R2MZ
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bs100dbr100cbs100g1bs120r+15br120bs521br520ga100t802mzga100t802mz1s202ds2s202ds4s102ds2sharp s202ds4s201s01sharp s201s02s201s02s202ds4 sharpis1621pc111ys
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gp1u28xp
Abstract: GP1S525V GP1U27XB GP1U291q GP1U28qp GP1U271R GP3A21 GP3A07 PQ09RD1X pc35* sharp
Contextual Info: Product Change Notification Type of Notification: Product Discontinuation ISSUE DATE LAST BUY DATE NOTIFICATION NO. LAST SHIP DATE 15 January 2003 31 March 2003 20030115-01 30 June 2003 This is to advise you that the following product s have been discontinued.
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bs100g1ga100t8r1mzgl430gl430qab+16gl450sgl451vh3gl481tgl484gl526jgp1a20gp1u28xpgp1s525vgp1u27xbgp1u291qgp1u28qpgp1u271rgp3a21gp3a07pq09rd1xpc35* sharp
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PC923 equivalent
Abstract: ST ZO 103 TRIAC triac zo 109 ma triac ZO 109 st triac ZO 109 PC922 equivalent S202S02 application S216S02 Application note PC851 equivalent TRIAC ZO 103 MA
Contextual Info: General Description of Optoelectronic Devices 2-1 General Description of Optoelectronic Devices 2-1-1 Infrared Emitting Diode LED * 1-24 , =— (1 ) Operating principle The infrared L E D utilizes the PN junction of gallium arsenide (G aA s) crystals.
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s101d01s102s01112s01/s116s01s10211+10pc923 equivalentst zo 103 triactriac zo 109 matriac zo 109 sttriac zo 109pc922 equivalents202s02 applications216s02 application notepc851 equivalenttriac zo 103 ma
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