S1304 Search Results

buz31

Contextual Info: SIEM ENS SIPMOS Power Transistor • • • BUZ 31 N channel Enhancem ent mode Avalanche-rated Type Vos Id ^DS on Package 1> Ordering Code BUZ 31 200 V 13.5 A 0.2 a TO-220 AB C67078-S1304-A2 Maxim um Ftatings Parameter Sym bol Continuous drain current, Tc = 28 'C

Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS lD = 200 V = 1 3 .5 A ^ D S o n = • 0 -2 BUZ 31 TO -220 AB Q N channel • Enhancement mode • Avalanche-proof • Package: TO-220 A B 1) Type Ordering code BUZ 31 C67078-S1304-A2 G Maximum Ratings Parameter Symbol

BUZ31

Contextual Info: SIPMOS Power Transistor BUZ 31 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 31 200 V 13.5 A 0.2 Ω TO-220 AB C67078-S1304-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 28 ˚C

Contextual Info: SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.28 Qg max. (nC) 96 Qgs (nC) 11 Qgd (nC) 21 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.

Contextual Info: SQR50N04-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0038 ID (A) 50 Configuration Single TO-252 Reverse Lead DPAK TrenchFET Power MOSFET

Contextual Info: SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () ID (A) 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®

Contextual Info: SPICE Device Model SUD35N10-26P www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: TOP TOUCH LOCKING CONNECTOR HIROSE Original General ^ - The 1300 series top touch locking 24-contact connec­ tors are of the same design as the well-known 1600

Contextual Info: SiR426DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.0105 at VGS = 10 V 30a 0.0125 at VGS = 4.5 V 30a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see

Contextual Info: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: SPICE Device Model SUD23N06-31 www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SUD19P06-60 www.vishay.com Vishay Siliconix P-Channel 60 V D-S 150 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si2377EDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

f 0452 N-Channel MOSFET

Contextual Info: SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0032 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 4.5 V

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

Contextual Info: SiHP15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.28 Qg max. (nC) 96 Qgs (nC) 11 Qgd (nC) 21 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0032 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 4.5 V

Contextual Info: SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.

Contextual Info: SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () ID (A) 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®

P-1345B-CTA

Abstract: S-1308-SB09 P-1328-CTA S-1324-STA P-1360WE P-1334B-ST P-1324-CTA P-1334-CTA S-1324-CTA P-1360B-SB
Contextual Info: 1300 SERIES RECTANGULAR CONNECTORS f Introduction M IN IC O N of sm all, re c ­ so ld erin g , crim ping, and w ire w rap p in g along with v a ­ tangular, m u lti-co n tact co n n ecto rs w hich H IR O S E has 1300 se ries rious ac es so ries are av a ila b le for a w id e rang e of a p ­

TCS 1002

Abstract: ZTTCV
Contextual Info: FRO N TER ELECTRO NICS CO.LTD. M ^ tâ & 4L -f f t FR. 4S *¡ m CERAM IC RESONATOR ZTACC/CS/CVDMG/MT/MX ZTTCC/CS/CVJMG/MT/MX S eries o f C cra m ic R e so n u to rfC h ip Type DIMENSIONS Unit:mm) ss 2.00-50.0MHz iz&Q'p ( ZTT Series ) £ / <?/ ZTACC ZTTCC

Contextual Info: SiS435DNT Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a 0.0054 at VGS = - 4.5V - 30a 0.0060 at VGS = - 3.7 V - 30a 0.0083 at VGS = - 2.5 V - 30a

Contextual Info: SPICE Device Model SUD40N08-16 www.vishay.com Vishay Siliconix N-Channel 80 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C