S11018 Search Results

ultra3 scsi

Abstract: lsi logic SYM53C1000 serial eeprom logic symbios SYM53C1010-66
Contextual Info: 04/28/00 Differences Between the SYM53C1010-66 and SYM53C1000 Systems Engineering Note S11018 Version 1.0 Introduction This SEN provides a description of the differences between the SYM53C1010-66 and the SYM53C1000. Both devices provide an Ultra160 SCSI solution. Both devices support a 66 MHz, 64-bit PCI bus.

Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

C10535E

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SI5419D

Abstract: PowerPAK ChipFET Single
Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: SMMB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 20 RDS(on) () at VGS = 4.5 V 0.046 RDS(on) () at VGS = 2.5 V 0.063 ID (A)a • Halogen-free According to IEC 61249-2-21

S11074

Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
Contextual Info: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground

DBM01

Abstract: C10535J PD9611GT NEC 3780
Contextual Info: データ・シート MOS集積回路 MOS Integrated Circuit µPD9611 ４チャネル PCM CODEC PD9611は，ITU-T勧告G.711，G.714に準拠したA則／μ則PCM CODECを４チャネル内蔵しており，PBXのアナ ログ加入者回路などのアプリケーションに最適です。

Contextual Info: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

marking 7E SOT-23 Diode

Abstract: marking code vishay SILICONIX sot-23
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

C10535E

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD9611 FOUR-CHANNEL PCM CODEC The µPD9611 incorporates 4-channel A-law/µ-law PCM CODECs compliant with ITU-T Recommendation G.711/ G.714 and is suitable for applications such as PBX analog subscriber line circuits.

Contextual Info: SMMB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 20 RDS(on) () at VGS = 4.5 V 0.046 RDS(on) () at VGS = 2.5 V 0.063 ID (A)a • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

DBM01

Abstract: C10535J NEC 3780
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

sot 23 marking code

Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

Contextual Info: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si5419

Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

MARKING BF

Abstract: SI5419DU PowerPAK ChipFET Single
Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SUD23N06-31-GE3

Contextual Info: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

marking 2N7002E-T1-E3

Abstract: sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

si5419du

Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®