RN731V Search Results

Diode RN731V

Abstract: RN731V VHF-UHF band variable attenuators and AGC variable attenuators and AGC
Contextual Info: Diodes PIN diode RN731V FExternal dimensions Units: mm High frequency diodes FApplications VHF / UHF band variable attenuators and AGC FFeatures 1) Small surface mounting type. (UMD2) 2) Low high–frequency forward resistance (rF ) / low capacitance (CT ).

RN731V

Contextual Info: REFERENCE 29-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RN731V No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI

138KV

Abstract: RN731V
Contextual Info: RN731V Diodes PIN diode RN731V zApplications zDimensions Unit : mm VHF / UHF band variable attenuators and AGC. 1.25±0.1 zLand size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low

Contextual Info: RN731V Diodes PIN diode RN731V Applications VHF / UHF band variable attenuators and AGC. Dimensions Unit : mm Land size figure (Unit : mm) Features 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low capacitance (CT). Construction Silicon epitaxial planar

RN731V

Contextual Info: RN731V Diodes PIN diode RN731V !External dimensions Units : mm !Applications VHF/UHF band variable attenuators and AGC. 2.5±0.2 9 1.25±0.1 9 0.1 +0.1 −0.05 0.3±0.2 1.25±0.1 Symbol Limits DC reverse voltage VR 50 V DC forward current IF 50 mA Power dissipation

Diode RN731V

Abstract: RN731V
Contextual Info: RN731V Diodes PIN diode RN731V !External dimensions Units : mm !Applications VHF/UHF band variable attenuators and AGC. 2.5±0.2 9 1.25±0.1 9 0.1 +0.1 −0.05 0.3±0.2 1.25±0.1 Symbol Limits DC reverse voltage VR 50 V DC forward current IF 50 mA Power dissipation

Contextual Info: RN731V RN731V Diodes PIN diode RN731V zApplications zDimensions Unit : mm VHF / UHF band variable attenuators and AGC. 1.25±0.1 zLand size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2)

Contextual Info: RN731V Diodes PIN diode RN731V zApplications zExternal dimensions Unit : mm VHF / UHF band variable attenuators and AGC. 0.9MIN. 0.8MIN. 2.1 CATHODE MARK 2.5±0.2 1.7±0.1 zFeatures 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low

Contextual Info: RN731VFH Diodes PIN diode AEC-Q101 Qualified RN731VFH zLand size figure Unit : mm zApplications zDimensions (Unit : mm) VHF / UHF band variable attenuators and AGC. 1.25±0.1 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2)

Contextual Info: Diodes PIN Diode RN731V •A pplications VHF/UHF band variable attenuators and AGC •E x te rn a l dimensions Units: mm CATHODE MARK - High frequency diodes / •F e a tu re s 1) Designed for mounting on small surface areas (UM D2). 2 )L o w h ig h - fr e q u e n c y fo r w a rd re s is ta n c e

Contextual Info: RN731V Diodes PIN diode RN731V zApplications zExternal dimensions Unit : mm VHF / UHF band variable attenuators and AGC. 1.25±0.1 zLand size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2)

Contextual Info: RN731V Diodes PIN diode RN731V zApplications zDimensions Unit : mm VHF / UHF band variable attenuators and AGC. 1.25±0.1 zLand size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

diode zener mtz 107

Abstract: INS400 zener UMZ te-146
Contextual Info: Diodes Table of Characteristics Table of Characteristics Small signal diodes •Switching diodes These are switching diodes with outstanding supply capability and high reliability, of which Rohm is especially proud. With the UMD2 package, in particular, superb surge characteristics are obtained despite the compact size of the package. I n

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows