RN2011 Search Results

RN1010

Abstract: RN2001 RN2010 RN2011
Contextual Info: RN2010,RN2011 シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN2010,RN2011 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: TOSHIBA RN2010,RN2011 T O SH IB A TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2010, RN2011 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS . 5.1 M A X . • • • • With Built-in Bias Resistors Simplify Circuit Design

RN1010

Abstract: RN2010 RN2011 25F1B PC400
Contextual Info: RN2010,RN2011 シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN2010,RN2011 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: TOSHIBA RN2010,RN2011 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2010, RN2011 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design

Contextual Info: RN1010,1011 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN2010, RN2011 EQUIVALENT CIRCUIT

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

3rn1010

Abstract: RN1010 RN1011 RN2010 RN2011
Contextual Info: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN1010,RN1011 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1010, RN1011 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

RN1417

Abstract: rn4601
Contextual Info: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404

rr1206

Abstract: EN1602 RN10U RN1509 RN1510 RN1511 RN1601 RN1603 RN1604 RN1605
Contextual Info: - 328 - mfctìS m % tt RN1509 Pc* VcBO V m h (Ta=25‘ C,*EPIÍTc=25‘ C) , £ (V) (A) (W) (min) (max) SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 30 SW/INV/D 50 50 0.1 0.3 0.1 50 SW/INV/D 50

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: T O S H IB A RN1010,RN1011 T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1010, RN1011 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS . 5.1 M A X . • • • • With Built-in Bias Resistors

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16