RN1242 Search Results

Contextual Info: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 Unit: mm For Muting and Switching Applications l High emitter-base voltage : VEBO = 25v (min) l High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)

Contextual Info: T O SH IB A RN1241 ~R N 1244 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1241, RN1242, RN 1243, RN1244 U nit in mm FOR M U TIN G A N D SW ITCHING APPLICATIONS 4.2 MAX. • High Emitter-Base Voltage • High Reverse h p g :V e b o = 25V (Min.)

RN1241

Abstract: RN1242 RN1243 RN1244
Contextual Info: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 Unit: mm For Muting and Switching Applications High emitter-base voltage : VEBO = 25v (min) High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)

Contextual Info: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 Unit: mm For Muting and Switching Applications z High emitter-base voltage : VEBO = 25v (min) z High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)

RN1241

Abstract: RN1242 RN1243 RN1244 RN1241-RN1244
Contextual Info: RN1241～RN1244 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1241,RN1242,RN1243,RN1244 ○ ミューティング用 ○ スイッチング用 単位: mm z エミッタ・ベース間電圧が大きい。

RN1241

Abstract: RN1242 RN1243 RN1244
Contextual Info: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 For Muting and Switching Applications Unit in mm High emitter-base voltage : VEBO = 25v (min) High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)

RN1241

Abstract: RN1242 RN1243 RN1244
Contextual Info: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 Unit: mm For Muting and Switching Applications z High emitter-base voltage : VEBO = 25v (min) z High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

RN1417

Abstract: rn4601
Contextual Info: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

RN1241

Abstract: RN1242 RN1243 RN1244
Contextual Info: TOSHIBA RN1241 ~ R N 1 244 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1241, RN 1242, RN1243, RN1244 Unit in mm FOR M U TIN G A N D SW ITCHING APPLICATIONS • • High Emitter-Base Voltage :V e b o = 25V (Min.) High Reverse hpg : Reverse hFE = 150(Typ.) (V C E = —2V, I C = —4mA)

Contextual Info: RN1241-RN1244 TOSHIBA SILICON NPN EPITAXIAL TYPE PCT PROCESS RN17A1 7 • ■g uRm N u -m 17A m m m ■w ■ R N 1■ 9 Z■R« r g m m ■v R N 1 1Ù.Ù. ■ ■ g u m u -m m Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • 4.2 MAX. High Emitter-Base Voltage :V eb 0 = 25V (Min.)

MIG20J501L

Abstract: TOSHIBA IGBT DATA BOOK 1JU42 C7021 RN1242 TLP421 inverter circuit using IGBT TOSHIBA module mig20j
Contextual Info: MIG20J501L TOSHIBA INTELLIGENT POWER MODULE MIG20J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 20 A (2) Control IC (3) (4) • High voltage IC ´ 3 + low voltage IC ´ 1 · 5-V system CMOS/correspond to TTL · Single power supply driving bootstrap circuit

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

RN1Z

Abstract: BN1243 KN1204 RN1002 RN1003 RN1004 RN1006 RN1007 8N2226 RN1011
Contextual Info: - 324 - * 1 3 = 2 5 ^ , *EP(äTc=25‘ C m. s tt m s ä v'cBO VcEO IC(DC) Pc (V) (V) (A) (W) Pc* (W) (uk) (max) V'CB ,'Btr (V) ' Ic (A) Ib (A) 0. 005 0.00025 50 50 5 0.01 0.3 0. 005 0. 00025 50 70 5 0.01 0.3 0. 005 0. 00025 0.1 50 80 5 0.01 0.3 0. 005 0.00025

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

MIG20J501L

Abstract: tlp421 equivalent inverter circuit using IGBT TOSHIBA module inverter air conditioner toshiba overcurrent inverter protection TOSHIBA IGBT DATA BOOK 1JU42 C7021 RN1242 TLP421
Contextual Info: MIG20J501L TOSHIBA INTELLIGENT POWER MODULE MIG20J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 20 A (2) Control IC (3) (4) • High voltage IC x 3 + low voltage IC × 1 • 5-V system CMOS/correspond to TTL • Single power supply driving bootstrap circuit

mig30j501l

Abstract: MIG30J50 MIG30J inverter circuit using IGBT TOSHIBA module
Contextual Info: MIG30J501L TOSHIBA INTELLIGENT POWER MODULE MIG30J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 30 A (2) Control IC (3) (4) • High voltage IC x 3 + low voltage IC × 1 • 5-V system CMOS/correspond to TTL • Single power supply driving bootstrap circuit