RMM5030 Search Results

RAYTHEON

Abstract: RMM5030 3433B
Contextual Info: RMM5030 9-10 GHz GaAs Power Amplifier MMIC PRODUCT INFORMATION Description Features Performance Characteristics The Raytheon RMM5030 is an X-band two-stage dual channel GaAs MMIC power amplifier operating over 9-10 GHz which can be configured to provide either 34 dBm of minimum saturated single channel power into 50 ohms

x-band mmic

Contextual Info: Raytheon Electronics RMM5030 9-10 GHz GaAs MMIC Power Amplifier Description The Raytheon RMM5030 is an X-band two-stage GaAs MMIC power amplifier operating over 9-10 GHz which can be configured to provide either 34 dBm of minimum saturated power into 50 ohms or 37 dBm into

RMM2071

Abstract: RAYTHEON RMM5030 "15 GHz" power amplifier mmic 37 dBm system on chip x-band
Contextual Info: RMM2071 RMM5030 Wideband Variable-Gain 9-102-18 GHzGHz GaAs MMIC Power AmplifierAmplifier The Raytheon RMM5030 is an X-band two-stage GaAs MMIC power amplifier operating over 9-10 GHz which can be configured to provide either 34 dBm of minimum saturated power into 50 ohms or 37 dBm into

Contextual Info: Raytheon Electronics RMM5080 9-11 GHz GaAs MMIC Oliver Amplifier Description The RMM5080 is a two-stage driver amplifier that is designed to have 1.1 watts of output power and 12 dB of large signal gain from 9-11 GHz. The circuit is designed specifically to drive two paralleled devices like the

9715

Abstract: RMM5080 9452 RMM5030 RMM2071 amplifier 1 2 ghz
Contextual Info: RMM2071 RMM5080 Wideband Variable-Gain 9-112-18 GHzGHz GaAs MMIC Driver Amplifier Amplifier Description The RMM5080 is a two-stage driver amplifier that is designed to have 1.1 watts of output power and 12 dB of large signal gain from 9-11 GHz. The circuit is designed specifically to drive two paralleled devices like the