RF501B2S Search Results

RF501B2S

Contextual Info: RF501B2S Diode Fast Recovery Diode RF501B2S ●Application General rectification ●Land size figure Unit : mm ●Dimensions（Unit : mm） 6.0 6.5±0.2 5.1±0.2 0.1 0.5±0.1 1.5±0.3 C0.5 1.6 1.5 0.75 2.5 ① CPD 0.9 （1） ●Construction Silicon epitaxial

749P

Contextual Info: Data Sheet Fast Recovery Diode RF501B2S Dimensions（Unit : mm ） Land size figure Unit : mm 6.0 Features 1) Power mold type.(CPD) 2) High reliability 3) Low VF 1.6 CPD 4) Very fast recovery 5) Low switching loss 1.6 3.0 2.0 6.0 Applications

Contextual Info: RF501B2S Diodes Fast recovery diode Silicon epitaxial planer RF501B2S zLand size figure zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 6.0 2.3±0.2 0.1 0.5±0.1 1.5 ① 1.2 0.75 0.8 （2） 0.65±0.1 （3） 0.55±0.1 0.55

TC180

Contextual Info: RF501B2S Diodes Fast recovery diode Silicon epitaxial planer RF501B2S zLand size figure zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 6.0 2.3±0.2 0.1 0.5±0.1 1.5 ① 1.2 0.75 0.8 （2） 0.65±0.1 （3） 0.55±0.1 0.55

749P

Abstract: RF501B2S
Contextual Info: Fast Recovery Diode RF501B2S zDimensions（Unit : mm ） zLand size figure Unit : mm 6.0 zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss 1.6 CPD 1.6 3.0 2.0 6.0 zApplications General rectification 2.3 2.3

749P

Contextual Info: RF501B2S Data Sheet Fast Recovery Diode RF501B2S Dimensions（Unit : mm ） Land size figure Unit : mm 6.0 Features 1) Power mold type.(CPD) 2) High reliability 3) Low VF 1.6 CPD 4) Very fast recovery 5) Low switching loss 1.6 3.0 2.0 6.0 Applications

Contextual Info: Data Sheet Fast Recovery Diode RF501B2S Dimensions Unit : mm Land size figure Unit : mm 6.0 Features 1) Power mold type.(CPD) 2) High reliability 3) Low VF 1.6 CPD 4) Very fast recovery 5) Low switching loss 1.6 3.0 2.0 6.0 Applications General rectification

DRF501B2S

Abstract: N1055 Diode D 54 212E 971e RF501B2S
Contextual Info: SPICE PARAMETER RF501B2S by ROHM FAE Div. * RF501B2S D model * Date: 2008/07/30 .MODEL RF501B2S D + IS=54.971E-12 + N=1.0556 + RS=5.1306E-3 + IKF=35.426E-3 + EG=1.0300 + CJO=193.53E-12 + M=.44869 + VJ=.51503 + ISR=933.12E-12 + NR=3.2000 + BV=200 + TT=30.212E-9

Contextual Info: RF501B2S Diodes Fast recovery diode RF501B2S zApplications General rectification zLand size figure zDimensions Unit : mm 6.0 6.5±0.2 5.1±0.2 0.1 6.0 0.5±0.1 1.5±0.3 C0.5 1.6 9.5±0.6 5.5±0.3 0.1 1.6 1.5 0.75 2.5 ① 3.0 2.0 zFeatures

RF501B2S

Contextual Info: RF501B2S Diodes Fast recovery diode Silicon epitaxial planer RF501B2S zApplications General rectification zLand size figure zExternal dimensions (Unit : mm) 6.0 6.5±0.2 5.1±0.2 0.1 6.0 0.5±0.1 1.5±0.3 C0.5 1.6 9.5±0.6 5.5±0.3 0.1

RF501B2S

Contextual Info: RF501B2S Diodes Fast recovery diode RF501B2S zApplications General rectification zDimensions Unit : mm zLand size figure 㩷㩷㩷㩷 㪍㪅㪇 㪉㪅㪊㫧㪇㪅㪉 䇭䇭䇭㩷㪇㪅㪈 㪍㪅㪌㫧㪇㪅㪉 㪇㪅㪌㫧㪇㪅㪈 㪍㪅㪇 㪈㪅㪌㫧㪇㪅㪊

RF501B2S

Contextual Info: RF501B2S Diodes Fast recovery diode RF501B2S zApplications General rectification zLand size figure zDimensions Unit : mm 6.0 2.3±0.2 0.1 6.5±0.2 0.5±0.1 6.0 1.5±0.3 zFeatures 1) Power mold type (CPD) 2) High reliability 3) Low VF 4) Very fast recovery

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RF2001

Abstract: 1SR154 1SR154 400V download diode rectifier RF2001T3D RR274EA-400 10a ultra fast diode 1SR154-400 RR274EA diode 1SR154-400
Contextual Info: 2009 Product Catalog Discrete Semiconductors Fast Recovery Diodes Rectifier Diodes Fast Recovery Diodes ROHM’s RF series utilizes a unique process for the highest recovery characteristics in the industry. The novel design, which emphasizes low loss and high reliability, has been well received in the market, resulting in the number one

TO-220FN

Abstract: RF diodes TO220FN 10na RF2001T2D RF1001T2D common anode fast
Contextual Info: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss

RF071M2S

Abstract: RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D TO-220FN
Contextual Info: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss