RF1S45 Search Results

RFP45N02L

Contextual Info: HARRIS S E M I C O N D U C T O R RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022D, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the

T0-262AA

Contextual Info: HAFRRIS S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description • 45A,60V The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and

45N03L

Abstract: FP45N03L F45N03L RFP45N03L 014E3 f45n 03LSM
Contextual Info: CIS H A R R IS RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 4 5 A , 30V • r DS ON = 0.022SJ • Tem perature C o m p e n s a tin g PS PICE Model

tt 4458

Abstract: mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET
Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

RFP45N06

Abstract: AN7254 AN7260 RF1S45N06 RF1S45N06SM RF1S45N06SM9A RFG45N06 rfg4
Contextual Info: RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM S E M I C O N D U C T O R 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 45A, 60V SOURCE DRAIN GATE • rDS ON = 0.028Ω • Temperature Compensating PSPICE Model

AN9321

Abstract: AN9322 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 45N06LE
Contextual Info: RFP45N06LE, RF1S45N06LESM Data Sheet Title FP4 06L 1S4 06L M bt A, V, 28 m, gic vel October 1999 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs Features These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process

RFP45N06

Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM in te fs il D ata S h e e t J u l y 19 99 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs File N u m b e r 3 5 7 4 .4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

tt 4458

Abstract: AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456
Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

F1S45N06

Abstract: MOSFET S1A M n10 ece
Contextual Info: ÎS 3 H A R U Ü S i “ ' " R " RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM I S " T" 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC STYLE TO-247 • 45A , 60V SOURCE • rDS ON = 0 -02 8 U • Temperature Compensating PSPICE Model

Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet Title FG4 06, P45 6, 1S4 06S bt A, V, 28 m, anwer OSTs utho July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

mosfet motor dc 48v

Abstract: AN9321 AN9322 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334
Contextual Info: RFP45N06LE, RF1S45N06LESM Data Sheet 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization

RF1S45N06LE

Abstract: RF1S45N06LESM RF1S45N06LESM9A RFG45N06LE RFP45N06LE F45N06LE 45N06LE
Contextual Info: S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description • 45A, 60V • UIS Rating Curve The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and

Contextual Info: ASSESS? RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022É1, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A,20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes

AN9321

Abstract: AN9322 RF1S45N02L RF1S45N02LSM RF1S45N02LSM9A RFP45N02L
Contextual Info: RFP45N02L, RF1S45N02L, RF1S45N02LSM 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes

Contextual Info: interrii RFP45N06LE, RF1S45N06LESM D ata S h e e t 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes

fp45n

Abstract: F45N02L AN9321 AN9322 RF1S45N02L RF1S45N02LSM RF1S45N02LSM9A RFP45N02L
Contextual Info: RFP45N02L, RF1S45N02L, RF1S45N02LSM S E M I C O N D U C T O R 45A, 20V, 0.022Ω, N-Channel Logic Level Power MOSFETs May 1997 Features Description • 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the

FP45N03L

Abstract: F45N03L fp45n03 RFP45N03L RF1S45N03LSM TA49030 F45N03 relay 24v 30a AN7254 AN7260
Contextual Info: RFP45N03L, RF1S45N03L, RF1S45N03LSM S E M I C O N D U C T O R 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 45A, 30V SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model

f45n03l

Abstract: FP45N03L
Contextual Info: ? *3 2 S RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

45n06

Abstract: AN9321 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334 fp45n 45N06LE
Contextual Info: RFP45N06LE, RF1S45N06LESM Data Sheet 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization

FP45N03L

Abstract: fp45n03 f45n03l fp45n RFP45N03L N03l TA49030 F45N03 N03LS bvdss
Contextual Info: [ /Title RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M /Subject (45A, 30V, 0.022 Ohm, RFP45N03L, RF1S45N03L, RF1S45N03LSM Semiconductor 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A, 30V • Peak Current vs Pulse Width Curve

Contextual Info: P *3 3 S RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 45A,60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: H A F R F R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM IS s e m i c o n d u c t o r 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Description • 45A, 60V • UIS Rating Curve The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and

AN9321

Abstract: AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 F1S45N06
Contextual Info: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier