PTF180101S Search Results

PTF180101S Datasheets (3)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTF180101S		Infineon Technologies	LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz	Original	PDF	309.61KB	10
PTF180101S V1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 1.99GHZ H-32259-2	Original	PDF	308.8KB
PTF180101SV1		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W H-32259-2	Original	PDF		10

PTF180101S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
p03 transistor Abstract: resistor 220 ohm PTF180101S H-32259-2 220QBK Contextual Info: PTF180101S LDMOS RF Power Field Effect Transistor 10 W, 1805 – 1880 MHz, 1930 – 1990 MHz 10 W, 2110 – 2170 MHz Description The PTF180101S is a 10-watt, internally-matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.	Original	ptf180101s 10-watt h-32259-2 p03 transistor +2resistor 220 ohm 220qbk	PDF
PTF180101S Contextual Info: Product Brief PTF180101S GSM/EDGE/WCDMA RF Power FET The PTF180101S Performance A multi-purpose driver, the PTF180101S is suitable for GSM/EDGE, CDMA2000 and WCDMA applications. The PTF180101S operates well in the DCS, PCS or UMTS bands. This device operates at 50% efficiency	Original	ptf180101s cdma2000 b134-h8298-x-0-7600	PDF
PG-DSO-20 Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test	Original	pg-dso-20 pg-rfp-10 h-34265-8 h-33265-8 +15h-30248-2 h-36248-2 h-33288-2 h-31248-2 h-37248-2 h-34288-2 a1807 ptfa211801e h-32259-2 lt 860 ptfa071701gl ptfa072401fl 1800 ldmos 1805-1880 ptma210452m	PDF
infineon 018 Contextual Info: PTF180101 LDMOS RF Power Field Effect Transistor 10 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization	Original	ptf180101 infineon 018	PDF
PTF180101S Abstract: PTF180901E PTF180901F Contextual Info: Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 Performance One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain	Original	ptf180901 gsm/edge/cdma2000 b134-h8296-x-0-7600 ptf180101s +2ptf180901e ptf180901f	PDF
resistor 220 ohm Abstract: PTF180101S P4525-ND 349 2110 marking us capacitor pf l1 PTF180101 Contextual Info: PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description Features The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization	Original	ptf180101 resistor 220 ohm ptf180101s p4525-nd +2349 2110 marking us capacitor pf l1	PDF
PTFB182503FL Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production	Original	ptfa041501e ptfa041501f pg-dso-20-63 pg-rfp-10 +15h-33265-8 h-34265-8 h-30260-2 h-36260-2 h-30265-2 h-30248-2 ptfb182503fl ptfa08150 rf power transistors ptfa081501e ptfa092213el ptfb ptfa211801e ptfb182503 ptfb192503	PDF
A211801E Abstract: A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E Contextual Info: Preliminary Product Selection Guide Preliminary Product Selection Guide Pac kag es ffor or LDMO S RF P ower Tran sistor s and IC s ack age LDMOS Po ans ors ICs RF Power Product Selection Guide TEP AC - Therm al ly -Enh anc ed C er amic TEPA Thermal ally ly-Enh	Original	h-30248-2 h-36248-2 h-30260-2 h-36260-2 +15h-30265-2 h-31248-2 h-37248-2 h-31260-2 h-31265-2 a211801e a0912 tma210 ptfa211801e a091201e rf power transistors er 2680 ptf080101m ptf080101s ptf140451e	PDF