PN100 Search Results

2N5551 CJ

Contextual Info: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100

pnp pn100 transistor

Abstract: PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

t1 BC547

Abstract: specifications of BC547B transistor BC547B bc547c fairchild transistor bc547 specifications 547B 547C Bc547B TRANSISTOR BC547A CBVK741B019
Contextual Info: BC547 / BC547A / BC547B / BC547C BC547 BC547A BC547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

PN100

Contextual Info: PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier • • This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 1 B SOT-23 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A

Contextual Info: 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum RâtinÇjS Symbol T A = 25°C unless o th e rw ise noted

2n5172

Abstract: 2N517
Contextual Info: SEMICONDUCTOR ¡m 2N5172 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

BC547 as amplifiers

Abstract: bc547b BC547A BC547C BC547 C 547c transistors 547C BC547C SEMICONDUCTOR 547A Use of BC547 transistor
Contextual Info: BC547 BC547A BC547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

2N3704

Abstract: equivalent transistor 2n3704 PN100
Contextual Info: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol

pn200

Abstract: PN100 PN100A PN200A pnp pn100 transistor transistor pn100
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N5172

Abstract: PN100
Contextual Info: 2N5172 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBT100

Abstract: PN100A MMBT100A PN100
Contextual Info: PN100 PN100A MMBT100 MMBT100A C E C B TO-92 B SOT-23 E Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol

2N3390

Abstract: 2N3393 2N3391 2N3391A 2N3392 PN100A
Contextual Info: SEMICONDUCTOR 2N3390 2N3391 2N3391A 2N3392 2N3393 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

2N3704

Abstract: PN100
Contextual Info: 2N3704 FAIRCHILD SEMICONDUCTOR tm 2N3704 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Rdtinys

2N3417

Abstract: 2N3416 PN100A
Contextual Info: SEMICONDUCTOR 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

Contextual Info: D825 Séparateurs à bride avec matériaux spéciaux Caractéristiques „„ Etendues de mesure de „„ Class 150 à 2500 „„ NPS 2" à 3" „„ PN10 à PN100 „„ DN50 à DN80 160 mbar à 400 bar „„ Matière spéciale pour les pièces en contact avec le fluide

BC548B

Abstract: ic 548 Amplifier with transistor BC548 BC548 BC548A bc548b Datasheet bc548c BC548 APPLICATIONS bc548c datasheet C 548 B
Contextual Info: BC548 BC548A BC548B BC548C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

NPN Transistor PN100A

Abstract: CBVK741B019 F63TNR MMBT100 MMBT100A PN100 PN100A PN2222N PN100 TRANSISTOR
Contextual Info: PN100 / MMBT100 / PN100A / MMBT100A PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.

Contextual Info: SEMICONDUCTOR 2N3859A . TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum RatinQS

Contextual Info: S E M IC O N D U C T O R i 2N3415 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum RatinQS

Contextual Info: 2N3704 F A IR C H IL D SEMICONDUCTOR tm 2N3704 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum RatinQS

Contextual Info: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base

TIS98

Contextual Info: S E M IC O N D U C T O R TIS98 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS

3391A

Abstract: 2N3391 2N3390 2N3393 2n3392
Contextual Info: M ICÜNDUCTQR i / 2N3392 / 2N3393 2N3390 2N3391 2N3391A 2N3392 2N3393 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

MPS8098

Abstract: PN100
Contextual Info: MPS8098 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted