PL105 Search Results

105 Thyratron

Abstract: Thyratron PL 105 ignitron philips DC MOTOR SPEED CONTROL thyratrons
Contextual Info: P H ILIP S PL105 THYRATRON, mercury-vapour tetrode THYRATRON, tétrode à vapeur de mercure STROMTORR'OHRE, Quecksilberdampftetrode Application: P.C.: for use as rectifier with variable or stabilised output voltage and for electronic D.C. motor speed control.

PL105

Abstract: PL-105
Contextual Info: page 1 2 3 4 5 6 7 8 9 10 PL105 sheet 1 2 3 4 A B C D E FP date 1954.07.07 1954.07.07 1954.07.07 1954.07.07 1954.08.08 1954.08.08 1954.08.08 1954.08.08 1954.08.08 2000.05.14

MRC D6 16A

Contextual Info: Cover Marvell PXA270 Processor Developers Manual Doc. No. MV-S301039-00 , Rev. A April 2009 Marvell. Moving Forward Faster Released PXA270 Processor Developers Manual Document Conventions Note: Provides related information or information of special importance.

10UF

Abstract: 20MHZ 3300UF PL10
Contextual Info: Specification Document 69350 PL10S-05-*-* Non Isolated DC-DC Converters Features • Synchronous Rectification • Non-Isolated • Fixed Frequency • Nominal Input Voltage Range from 3-5V • Output Voltage Adjustable with the Trim Function (0.9 to 3.3V)

NX5312

Abstract: NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ
Contextual Info: LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.

Contextual Info: Surface Mount ADP-2-10-75+ ADP-2-10-75 Power Splitter/Combiner 2 Way-0° 75Ω 50 to 1000 MHz Maximum Ratings Operating Temperature Storage Temperature Features • low insertion loss, 0.6 dB typ. • excellent insertion loss flatness, 0.4 dB peak to peak

NX5315EH

Abstract: NX5315EH-AZ
Contextual Info: LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.

NX8341UJ

Abstract: NX8341 NX8341UH NX8341UL NX8341UN 6R01 10 gb laser diode NX8341TB
Contextual Info: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: LatticeSC/M Family Data Sheet DS1004 Version 02.1, June 2008 LatticeSC/M Family Data Sheet Introduction January 2008 Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 139 to 942 I/Os • 700MHz global clock; 1GHz edge clocks

gpon laser

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.

Contextual Info: LatticeSC/M Family Data Sheet DS1004 Version 01.6, August 2007 LatticeSC/M Family Data Sheet Introduction March 2007 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 132 to 942 I/Os

s c 6822 h 08

Abstract: S 6822 h 08
Contextual Info: Surface Mount ADP-2-10-75+ ADP-2-10-75 Power Splitter/Combiner 2 Way-0° 75Ω 50 to 1000 MHz Maximum Ratings Operating Temperature Storage Temperature Features • low insertion loss, 0.6 dB typ. • excellent insertion loss flatness, 0.4 dB peak to peak

2-bit comparator

Abstract: LFSC3GA15E-5F900I PR77A PR55D pr94a diode transistor pt36c pt36C PB110C pb127d PB138
Contextual Info: LatticeSC/M Family Data Sheet DS1004 Version 01.8, November 2007 LatticeSC/M Family Data Sheet Introduction March 2007 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 132 to 942 I/Os

sony ps3 eye camera

Abstract: PXA272 ED101 transistor PXA271 PXA27x ss100 transistor NPCE 795 AF117 transistor PXA210 relays STPI 310
Contextual Info: Intel PXA27x Processor Family Developer’s Manual January 2006 Order Number: 280000-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTELR PRODUCTS. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS

UG34

Abstract: Disc PDR70 LBX10-59 4711b UHX6-59 ug343 UHX8-59W
Contextual Info: 5.925 - 6.425 GHz* Type Number Diameter ft m LBX LBX6-59* LBX8-59* LBX10-59* LBX12-59* RPE Number(s) Regulatory Compliance* Low Gain, dBi Mid-Band 38.3 40.9 42.6 44.4 38.7 41.3 43.0 44.8 Top Beamwidth Degrees Cross Pol. Disc., dB 39.0 41.6 43.3

S1 6822

Contextual Info: Surface Mount ADP-2-10-75+ ADP-2-10-75 Power Splitter/Combiner 2 Way-0° 75Ω 50 to 1000 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter Internal Dissipation 0.5W max. 0.125W max.

NX5310

Abstract: NX5310EH NX5310EK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

NX5311

Abstract: NX5311GH NX5311GK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5311 Series 1 310 nm FOR 1.25 Gb/s, FTTH PON InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5311 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.

nec 2702

Contextual Info: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

Contextual Info: DATA SHEET LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

NX5310

Abstract: NX5310EH NX5310EH-AZ NX5310EK NX5310EK-AZ
Contextual Info: LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.