NX5312 Search Results
NX5312 Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NX5312 | California Eastern Laboratories | 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE | Original | 204.92KB | 7 | ||
| NX5312 | California Eastern Laboratories | NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For 155 Mb/s 622 Mb/s 1.25 Gb/s Applications | Original | 313.24KB | 5 | ||
| NX5312EH | NEC | Laser Diode, InGaAsP MQW-FP Laser Diode | Original | 91.36KB | 7 | ||
| NX5312EH-AZ | California Eastern Laboratories | 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE | Original | 204.92KB | 7 | ||
| NX5312EH-AZ | California Eastern Laboratories | NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For 155 Mb/s 622 Mb/s 1.25 Gb/s Applications | Original | 313.24KB | 5 | ||
| NX5312EK | NEC | Laser Diode, InGaAsP MQW-FP Laser Diode | Original | 91.36KB | 7 | ||
| NX5312EK-A | NEC | LASER DIODE MODULE 1330NM 5MW | Original | 313.25KB | 5 | ||
| NX5312EK-AZ | California Eastern Laboratories | 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE | Original | 204.93KB | 7 | ||
| NX5312EK-AZ | California Eastern Laboratories | NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For 155 Mb/s 622 Mb/s 1.25 Gb/s Applications | Original | 313.24KB | 5 |
NX5312 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NX5312
Abstract: NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ
|
Original |
nx5312pl10528ej02v0dsnx5312ehnx5312eh-az+2 | |
|
Contextual Info: DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. |
Original |
nx5312 | |
10 gb laser diode 1310 nmContextual Info: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5312 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 5.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: |
Original |
nx531210 gb laser diode 1310 nm | |
NX5312
Abstract: NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ
|
Original |
nx5312nx5312ehnx5312eh-aznx5312ek+1 | |
NEC JAPAN
Abstract: NX5312 NX5312EH NX5312EK PX10160E
|
Original |
nx5312nec japannx5312ehnx5312ek+1 | |
2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
|
Original |
2sk25002sk1543upd16861gsnec 2sk2500+6 | |
|
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |