PD431232L Search Results

UPD431232L

Abstract: uPD431232LGF-A8 uPD431232 M1046 UPD431232LGF-A12
Contextual Info: DATA SHEET SHEET MOS INTEGRATED CIRCUIT µ PD431232L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The µ PD431232L is 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. This

ssqc 25

Contextual Info: PD431232L 32,768 x 32-Bit CMOS Synchronous Static RAM: W ith Burst Counter; 3.3-Volt Power NEC NEC Electronics Inc. Preliminary Information August 1994 Description Pin Configuration T h e ¿/PD431232L is a 3 2 ,7 6 8 -w o rd by 32 -b it sy n c h ro ­ 100-Pin TQFP

Contextual Info: NEC PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The /¿PD431232L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. These

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

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Abstract: upd431232lgf
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-W ORD BY 32-BIT Description The ,PD431232L is 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. This

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431232L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The / j PD43 1232 L is 32,768 -w ord by 32 -bit synch rono us s ta tic RAM fa b rica te d w ith a d vanced C M O S te c h n o lo g y usin g N -channel m em ory cells.

d431232

Abstract: D431232L
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The ¿¿PD431232L is 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. This

32 PIN

Contextual Info: Low Power SR A M Selection Guide 1/ 2 Maximum supply current Access time Capacity Organization Version Part number Operating Standby |mA| (j/A) Data14”*“1 retention (/»A) 70 (70 ns. 85 ns. 100 ns) 100 15 CZ: 32-pin DIP (600mil). GW: 32-pin SOP <525mii)

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description T h e |iP D 431232L is a 32 ,768 -w o rd by 32 -b it synchronous static R A M fab ricated w ith advan ced C M O S te ch n o lo g y using N -channel m e m o ry cells.

D431000AGZ

Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
Contextual Info: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is