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NEC Electronics Group UPD431009LE15
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Bristol Electronics	UPD431009LE15		862			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NECEL PD431009LE15E2 INSTOCK
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Chip 1 Exchange	PD431009LE15E2		9,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Amtech PD431009LE15E2 INSTOCK
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Chip 1 Exchange	PD431009LE15E2		6,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others PD431009LE15E2 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	PD431009LE15E2		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

PD431009LE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ^PD 431009 is a high speed, low pow er, 1 179 072 bits 131 072 w o rd s by 9 bits C M O S static RAM. The ¿iPD431009 is packed in 36-pin plastic SOJ.	OCR Scan	128K-WORD iPD431009 36-pin PD431009LE-15 iPD431Q09LE-17 b427525 DGb42T2 P431009 PD431009. iPD431009LE:	PDF
IC-8817 Abstract: IC-3237 Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The µPD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The µPD431009 is packed in 36-pin plastic SOJ. Feature	Original	PD431009 128K-WORD PD431009 36-pin PD431009LE-15 PD431009LE-17 PD431009LE-20 IC-8817 IC-3237	PDF
IC-3237 Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /¿PD431009 is a high speed, lo w p o w e r, 1 179 072 b its 131 072 w o rd s by 9 b its CMOS sta tic RAM. The ¿iPD431009 is packed in 36-pin p la stic SOJ.	OCR Scan	uPD431009 128K-WORD PD431009 iPD431009 36-pin Stan-400A 040-ooos /JPD431009. /iPD431009LE: IC-3237	PDF
Contextual Info: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /JPD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high	OCR Scan	PD431009 /JPD431009 072-word /L/PD431009 iPD431009 36-pin 36-pin, 400-mil	PDF
Contextual Info: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿P D 4 3 1 0 0 9 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ¿¿PD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ.	OCR Scan	128K-WORD PD431009 36-pin PD431009LE-20 040laoo6 016to QQSl33b PD431009 iPD431009.	PDF
IC-3237 Abstract: 431009le Contextual Info: MOS INTEGRATED CIRCUIT HPD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT D e s c rip tio n The ^PD431009 is a high speed, lo w pow er, 1 179 072 bits 131 072 w o rds by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ. F e a tu re	OCR Scan	uPD431009 128K-WORD PD431009 36-pin PD431009LE-15 /PD431009LE-17 431009LE-20 PD431009. iiPD431009LE: IC-3237 431009le	PDF
D431000AGZ Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T Contextual Info: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is	Original	PD431000A ThepPD431000A 576bits vPD431OOOA uPD431OOOA 32-pin yPD431232L 013io D431000AGZ d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T	PDF