PD431 Search Results

IC-8815

Abstract: IC-3242 8815 k PD431008 UPD431008LE-15 PD431008LE-15 ic8815
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The µPD431008 is a high speed, low power, 1 048 576 bits 131 072 words by 8 bits CMOS static RAM. The µPD431008 is packed in 32-pin plastic SOJ. Feature

d431008

Contextual Info: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The ¿PD431008 is a high speed, lo w po w e r, 1 048 576 b its 131 072 w o rd s by 8 bits CMOS s ta tic RAM. The jt/PD431008 is packed in 32-pin p la stic SOJ.

D431000A

Abstract: d431000 PD431000A upd431000a
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In

IC-8817

Abstract: IC-3237
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The µPD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The µPD431009 is packed in 36-pin plastic SOJ. Feature

upd431008ll

Abstract: upd431008
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431008L 1 M-BIT CMOS FAST STATIC RAM 128 K-WORD BY 8-BIT Description The µ PD431008L is a high speed, low power, 1, 048, 576 bits 131, 072 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

UPD431232L

Abstract: uPD431232LGF-A8 uPD431232 M1046 UPD431232LGF-A12
Contextual Info: DATA SHEET SHEET MOS INTEGRATED CIRCUIT µ PD431232L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The µ PD431232L is 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel memory cells. The use of this technology and unique peripheral circuits makes these products high-speed devices. This

D431000

Abstract: D431000A PD431000A-X D4310 d431 PD431000A Power resistor 0,25R uPD431000A-X
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A-X 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µ PD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A-X has two chip enable pins (CE1, CE2) to extend the capacity. A and B versions are wide

Contextual Info: SEC ¿/PD4314 4 ,0 9 6 X 4-B IT STATIC CMOS RAM N E C Electronics Inc. Description Pin Configuration T h e ¿ PD4314 is a 4,096-w ord by 4-b it static random access m em ory fabricated with advanced silicon-gate technology. Its unique circuitry, using C M O S peri­

81-095

Contextual Info: PD431 VISHAY Vishay Semiconductors PD431 Package Dimensions in mm 96 12196 Document Number 81095 Rev. 1.2, 03-Jun-04 www.vishay.com 1 PD431 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to

PD431000A

Abstract: PD431000AGZ-70LL-KJH
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The μPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The μPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In

PD431000A-X

Abstract: PD431000 85X MARKING RESISTOR
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD431000A-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The μPD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The μPD431000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.

PD431000A

Abstract: PD431000 TSOP8 PD431000AGW-85LL PD431000AGZ-70LL-KJH PD431000AGW-85L PD431000AGW PD431000AGW-70L PD431000AGZ-70LL-KJH-A PD431000A-70L
Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD431000A 1M ビット CMOS スタティック RAM 128K ワードx8 ビット μPD431000A は 1,048,576 ビット（131,072 ワード×8 ビット）の CMOS スタティック RAM です。

nec pd431000

Abstract: UPD431000
Contextual Info: SEC PD431000 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The /PD431000 is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the j*PD431000 a high­

PD431000

Abstract: uPD431000
Contextual Info: N E C ELECTRONICS INC 36E bHS7SSS ]> 003213^ NEC 2 I NECE PD431000 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. T ~ W r r 3 ;3 .- lH r Description Pin Configuration the /*PD431Q00 Is a 131,072-word by 8-bit static RAM fabricated with advanced sillcon-gate technology.

Contextual Info: DATA SHEET NEC M O S INTEGRATED CIRCUIT /¿PD431016 1M-BIT C M O S FAST STATIC RAM 64K-WORD BY 16-BIT D escription The ¿ PD431016 is a high speed, low power, 1 048 576 bits (65 536 words by 16 bits CMOS static RAM. The ¿¿PD431016 are packed in 44-pin plastic SOJ.

Contextual Info: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.

Contextual Info: SEC PD431009 131,072 X 9-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The ¿/PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The μPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The μPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In

upd431016

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD431016L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The µ PD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

uPD431018

Abstract: uPD431018LE-15 UPD431018LE IC 8821 uPD431018L nec 44pin 1993
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431018 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 18-BIT Description The µPD431018 is a high speed, low power, 1 179 648 bits 65 536 words by 18 bits CMOS static RAM. The µPD431018 are packed in 44-pin plastic SOJ. Feature

PD431000A-X

Abstract: M10430 uPD431000AGZ-B10X-KJH
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD431000A-X is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.

IC-3237

Abstract: 431009le
Contextual Info: MOS INTEGRATED CIRCUIT PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT D e s c rip tio n The ^PD431009 is a high speed, lo w pow er, 1 179 072 bits 131 072 w o rds by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ. F e a tu re

PD4311

Abstract: PD4311A
Contextual Info: SEC //PD4311 1 6 ,3 8 4 x 1-BIT STATIC CMOS RAM NEC Electronics Inc. Description The //PD4311 is a 16,384-word by 1-bit static random access m em ory fabricated w ith advanced silicon-gate technology. Its unique circu itry, using CMOS peri­ pheral circu its and N -channel m em ory cells w ith