OCT2011 Search Results

L30ESDL5V0C3-2

Abstract: Diode LT n5 LT n5 ltn5 340W L30ESDL5
Contextual Info: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small

mbr20100ct liteon

Contextual Info: LITE-ON SEMICONDUCTOR MBR2070CT thru 20100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

2550CT

Contextual Info: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 25 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: L18ESD5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 180 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L18ESD5V0C3 is a dual voltage suppressor designed to protect components which are connected to data and transmission lines against Electro Static Discharge ESD ,

SLP1610P4

Abstract: 010Tj
Contextual Info: LITE-ON SEMICONDUCTOR L15ESDL5V0N6-2 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 150 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SLP1610P4 The L15ESDL5V0N6-2 is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been

WG16A

Abstract: 5962-9166703QYA LM2941WGRLQMLV LM2941GWRLQMLV 5962R9166702VYA
Contextual Info: LM2941QML 1A Low Dropout Adjustable Regulator and the load. Familiar regulator features such as short circuit and thermal overload protection are also provided. General Description The LM2941 positive voltage regulator features the ability to source 1A of output current with a typical dropout voltage of

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)

Contextual Info: LITE-ON SEMICONDUCTOR L05ESDL5V0NA-4 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 50 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SLP2510P8 The L05ESDL5V0NA-4 is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been

Contextual Info: LITE-ON SEMICONDUCTOR L15ESDL5V0NA-4 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 150 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SLP2510P8 The L15ESDL5V0NA-4 is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been

Contextual Info: Application Note AN-10A: Driving SiC Junction Transistors SJT with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJT) with current ratings ranging from 4 A to 16 A. SiC

L30ESDL5V0C3-1

Contextual Info: L30ESDL5V0C3-1 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 300 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-1 is a dual voltage suppressor designed to protect components which are connected to data and

MBR20200CT LITE-ON

Abstract: MBR20200CT
Contextual Info: LITE-ON SEMICONDUCTOR MBR20200CT REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

smd diode GW

Abstract: LM2991GW-QML
Contextual Info: LM2991QML Negative Low Dropout Adjustable Regulator General Description Features The LM2991 is a low dropout adjustable negative regulator with a output voltage range between −2V to −25V. The LM2991 provides up to 1A of load current and features a On /Off pin for remote shutdown capability.

Contextual Info: P3C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Wide Range Power Supply: 2.7V to 3.6V Three-State Outputs Fully TTL Compatible Inputs and Outputs

MBR3045CTW

Contextual Info: LITE-ON SEMICONDUCTOR MBR3045CTW REVERSE VOLTAGE - 45 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

P3C1256L

Contextual Info: P3C1256L LOW POWER 32K x 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Wide Range Power Supply: 2.7V to 3.6V Easy Memory Expansion Using CE and OE Inputs Three-State Outputs

SNVS390A

Abstract: CLGA 10 lead nac
Contextual Info: LM2941QML www.ti.com SNVS390A – AUGUST 2009 – REVISED OCTOBER 2011 LM2941QML 1A Low Dropout Adjustable Regulator Check for Samples: LM2941QML FEATURES 1 • 2 • • • Available with radiation guarantee – ELDRS Free 100 krad Si Output voltage adjustable from 5V to 20V

Contextual Info: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50

P4C187

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)

Contextual Info: TD10M GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE – 1000 Volts FORWARD CURRENT – 1.0 Ampere TD FEATURES • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has UL flammability classification

LC51

Abstract: L12ESDL5V0C6-4 l12esdl5v0
Contextual Info: LITE-ON SEMICONDUCTOR L12ESDL5V0C6-4 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 120 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOT23-6L The L12ESDL5V0C6-4 is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically

smd diode GW

Contextual Info: LM2991QML LM2991QML Negative Low Dropout Adjustable Regulator Literature Number: SNVS392A LM2991QML Negative Low Dropout Adjustable Regulator General Description Features The LM2991 is a low dropout adjustable negative regulator with a output voltage range between −2V to −25V. The

Contextual Info: LITE-ON SEMICONDUCTOR MBR2045CTW REVERSE VOLTAGE - 45 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MS1306

Abstract: max5553
Contextual Info: AK8180D 2.5V, 3.3V LVCMOS 1:10 Clock Fanout Buffer AK8180D Features Description The AK8180D is a member of AKM’ｓ LVCMOS clock fanout buffer family designed for telecom, networking and computer applications, requiring a range of clocks with high performance and low