OP535 Search Results

OP535

Contextual Info: L7TfiSaO DDODbflB 1 57E D OPTEK TECHNOLOGY INC OPTEK Product Bulletin OP535 July 1989 Replaces January 1985 NPN Silicon Photodarlington Type OP535 • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited

P535C

Abstract: P535A
Contextual Info: 0OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The O P535 consists of an NPN silicon

ai 972

Abstract: K6500 OP165 OP165A OP165B OP165C OP165D OP505 OP535 E5B0
Contextual Info: 0 OPTEK P ro d u c t B u lle tin O P165A J u n e 1996 GaAs Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D F e a tu re s • Narrow irradiance pattern • Mechanically and spectrally matched to the OP505 and OP535 series devices • Variety of power ranges

K9000

Abstract: OP165 OP535 OP535A OP535B OP535C
Contextual Info: ¡ 0 OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C • Features • Narrow receiving angle • T-1 package style • High current gain • Small package size for space limited applications Collector-Emitter V o lta g e . 15.0 V

K660

Abstract: K6600 OP265 OP265A OP265B OP265C OP265D OP505 OP535
Contextual Info: . OPTEK P roduct B ulletin OP265A June 1996 GaAIAs Plastic Infrared Emitting Diodes T yp e s OP265A, OP265B, OP265C, OP265D Features • • Narrow irradiance pattern Mechanically and spectrally matched to the OP505, OP535 series devices • Significantly higher power output than

Contextual Info: optek P roduct B ulletin OP165A June 1996 G aA s Plastic Infrared Emitting Diodes Types OP165A, OP165B, OP165C, OP165D • • Narrow irradiance pattern Mechanically and spectrally matched to the OP5Û5 and OP535 series devices • Variety of power ranges

ee01-3

Abstract: k9000 oakum OP535
Contextual Info: OPTEK TECHNOLOGY INC 2?E D • bT'löSäO 00001=03 1 ■ 0 OPTEK Product Bulletin OP535 July 1989 Replaces January 1985 NPN Silicon Photodarlington "Pm-lÆ Type OP535 DIM ENSIO NS ARE IN INCHES (MILLIMETERS!. a Absolute Maximum Ratings (T a = 2 5 °C unless otherw ise noted

Contextual Info: 0 .O P IE K Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon

0P165

Abstract: K9000 OP535 OP535A OP535B OP535C
Contextual Info: OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon

K9000

Abstract: OP535 OP535A OP535B OP535C
Contextual Info: OPTEK Product Bulletin OP535A June 1996 NPN Silicon Photodarlington Type OP535A, OP535B, OP535C Features • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited applications Description The OP535 consists of an NPN silicon

Contextual Info: Plastic Infrared Emitting Diode OP265, OP266 Series A, B, C, D, W Features: • • • • • • T-1 (3 mm) package style Choice of narrow or wide irradiance pattern Choice of dome or flat lens Mechanically and spectrally matched to other OPTEK devices

OP265FAD

Abstract: GaAs 850 nm Infrared Emitting Diode OP265 OP505 OP535 OP265FAA OP265F
Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP165, OP166 Series Features: • • • • • • T-1 3 mm package style Choice of narrow or wide irradiance pattern Choice of dome lens or flat lens Mechanically and spectrally matched to other OPTEK devices Higher power output than GaAs at equivalent drive currents

all datasheet phototransistor

Abstract: Phototransistor with base emitter Reflective Optical Sensor focused E152 OP165 OP265 OP505 OP535 OPB702 OPB702D
Contextual Info: Product Bulletin OPB702 October 2000 Reflective Object Sensors Type OPB702, OPB702D, OPB702R Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • Focused for maximum sensitivity • Phototransistor (OPB702) or Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . . -40°C to +85°C

OP505 circuit

Abstract: OPB708 controlling ic lm311 OP165 OP265 OP505 OP535 OPB709 QPB709
Contextual Info: Product Bulletin OPB708, OPB709 OPTEK June 1996 Reflective Object Sensors Types OPB7Q8, QPB709 .135 3.43 .062(1.59) R NOM .210(5.33) .110(2.79) NOMkm I .090(2.29) .025(0.64) DIMENSIONS ARE IN INCHES(MILLIMETERS) .015(0.38) ¡»CATHODE LEAD. OTHER LEADS ARE .060(1.52)

OPB704

Contextual Info: Reflective Object Sensor OPB703 through OPB705, OPB703WZ through OPB705WZ, OPB70AWZ through OPB70HWZ Features: • • • • Phototransistor output High sensitivity Low-cost plastic housing Available with lenses for dust protection and ambient light filtration

Contextual Info: 0 . OPTEK P roduct B ulletin OPB708, OPB709 June 1996 Reflective Object Sensors Types OPB7Q8, QPB709 Features A bso lu te Maxim um R atings Ta = 25° C unless otherwise noted • Focused for maximum sensitivity • Phototransistor (OPB708) or photodarlington (OPB709) output

Contextual Info: OPTEK Product Bulletin OP163A April 1993 GaAs Plastic Infrared Emitting Diodes Types OP163A, OP163B, OP163C, OP163D DIM ENS ION S ARE IN INCHES MILLIM ETERS M E A S U R E M EN T SU R FA C E ( N O T E 3) .200(5.06) . .1 6 6 1 4 19 >, 145(3.68) .0 5 0 ( 1 .2 7 ] _,

OPB70AWZ

Abstract: 167mW
Contextual Info: Reflective Object Sensor OPB703 through OPB705, OPB703WZ through OPB705WZ, OPB70AWZ through OPB70FWZ Features: • • • • Phototransistor output High sensitivity Low-cost plastic housing Available with lenses for dust protection and ambient light filtration

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Reflective Object Sensor OPB703 through OPB705, OPB703WZ through OPB705WZ, OPB70AWZ through OPB70HWZ Features: • • • • Phototransistor output High sensitivity Low-cost plastic housing Available with lenses for dust protection and ambient light filtration

Contextual Info: Reflective Object Sensor OPB708, OPB709 OPB740 Series, OPB740WZ Series OPB708, OPB709, OPB740, OPB745 Series Features: • • • • • Focused for maximum sensitivity Phototransistor or photodarlington output Crosstalk does not exceed specified ICEO 24” 610 mm wire length