OP266 Search Results

Contextual Info: Plastic Infrared Emitting Diode OP265, OP266 Series A, B, C, D, W Features: • • • • • • T-1 (3 mm) package style Choice of narrow or wide irradiance pattern Choice of dome or flat lens Mechanically and spectrally matched to other OPTEK devices

Contextual Info: @ OPTEK Product Bulletin OP266A June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP266A, OP266B, OP266C, OP266D Features • Narrow irradiance pattern • Mechanically and spectrally matched to the O P 5O6 series devices • Significantly higher power output than

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Contextual Info: 0 . OPTEK Product Bulletin OP266W July 1989 G aA IA s Plastic Infrared Emitting Diode Type OP266W D IM E N SIO N S ARE IN INCH ES ¡M ILLIM ET ERS' Absolute Maximum Ratings T a 2 5 ° C u n le s s o th e rw ise noted) W ide irradiance pattern Mechanically and spectrally matched

AN890

Abstract: OP266W OP506W
Contextual Info: 0 . OPTEK Product Bulletin O P266W Jun e 1996 GaAlAs Plastic Infrared Emitting Diode Type OP266W Features • Wide irradiance pattern • Mechanically and spectrally matched to the OP 5O6W • Small package size for space limited applications • T-1 package style

Contextual Info: Plastic Infrared Emitting Diode OP265, OP266 Series A, B, C, D, W Features: • T-1 (3 mm) package style  Choice of narrow or wide irradiance pattern  Choice of dome or flat lens  Mechanically and spectrally matched to other OPTEK devices

Contextual Info: Plastic Infrared Emitting Diode OP266AA SERIES Features: • T-1 3 mm package style  Narrow irradiance pattern  Dome lens  Higher power output than GaAs at equivalent drive currents  850 nm diode Description: Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs)

OP265

Abstract: OP265A OP265B OP265C OP265D OP265W OP266 OP505 OP506 OP535
Contextual Info: Plastic Infrared Emitting Diode OP265, OP266 Series A, B, C, D, W Features: • • • • • • T-1 (3 mm) package style Choice of narrow or wide irradiance pattern Choice of dome or flat lens Mechanically and spectrally matched to other OPTEK devices

OP265A

Contextual Info: Plastic Infrared Emitting Diode OP265, OP266 Series A, B, C, D, W Features: • • • • • • T-1 (3 mm) package style Choice of narrow or wide irradiance pattern Choice of dome or flat lens Mechanically and spectrally matched to other OPTEK devices

T014A

Abstract: OP266 OP266A OP266B OP266C OP266D OP506 edfl
Contextual Info: 0 .O P T E K Product Bulletin OP266A Jun e 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP266A, OP266B, OP266C, OP266D • Narrow irradiance pattern • Mechanically and spectrally matched to the OP506 series devices • Significantly higher power output than

OP266

Abstract: OP266A OP266B OP266C OP266D OP506 OP261
Contextual Info: OPTEK Product Bulletin OP266A June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP266A, OP266B, OP266C, OP266D • Narrow irradiance pattern • Mechanically and spectrally matched to the OP506 series devices • Significantly higher power output than

AN890

Contextual Info: OPTEK Product Bulletin OP266W June 1996 GaAIAs Plastic Infrared Emitting Diode Type OP266W Features • Wide irradiance pattern • Mechanically and spectrally matched to the OP5Û6W • Small package size for space limited applications • T-1 package style

Contextual Info: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

OP265

Abstract: OP265A OP265B OP265C OP265D OP265W OP266 OP505 OP506 OP535
Contextual Info: Plastic Infrared Emitting Diode OP265, OP266 Series A, B, C, D, W Features: • • • • • • T-1 (3 mm) package style Choice of narrow or wide irradiance pattern Choice of dome or flat lens Mechanically and spectrally matched to other OPTEK devices

Contextual Info: 0 . O P T EK Product Bulletin OP266A June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP266A, OP266B, OP266C, OP266D Features • Narrow irradiance pattern • Mechanically and spectrally matched to the OP506 series devices • Significantly higher power output than

OP266

Abstract: OP506 OP535 OP266FAD OP266F
Contextual Info: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

OP266W

Abstract: OP506W
Contextual Info: 0.OPIEK Product Bulletin OP266W June 1996 GaAlAs Plastic Infrared Emitting Diode Type OP266W -Il* * WBBBBSm. iiipllBI8 8 M I pH • FOR IDENTIFICATION PURPOSES. CATHODE LEAD IS .060 (1.52 NOM SHORTER THAN ANODE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS)

Contextual Info: Plastic Infrared Emitting Diode OP265, OP266 Series A, B, C, D, W Features: • • • • • • T-1 (3 mm) package style Choice of narrow or wide irradiance pattern Choice of dome or flat lens Mechanically and spectrally matched to other OPTEK devices

Contextual Info: OPTEK Product Bulletin OP266A May 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP266A, OP266B, OP266C, OP266D MEASUREMENT SURFACE NOTE 3 DIMENSIONS ARE IN INCHES (MILLIMETERS) •200l5.0a) _ i .18014.57) ^ .050(1.27] . NOM / ANODE , 165(4.191 a .14513.69)

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Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

TSHA3400

Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
Contextual Info: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

SMD PLCC-2 1210

Abstract: smd transistor nm OP505 circuit VCSEL lens array TRANSISTOR 935 SMD Plastic Encapsulate Diodes OP233 935 diode smd transistor A 935 opv302
Contextual Info: 1742-2012:QuarkCatalogTempNew 9/17/12 4:59 PM Page 1742 TEST & MEASUREMENT 20 Optical Components A subsidiary of TT electronics plc Phototransistors Vertical Cavity Surface Emitting Laser VCSEL RoHS OPV380 OPV302 OPV382 OPV332 OP802SL OP802WSL OP505 OP506

OP123

Abstract: OP124 OP140 OP165 OP166 OP169 OP223 OP265 OP266
Contextual Info: Converting Radiant Intensity in Units of mW/cm2 to mW/sr. Application Bulletin 222 Radiant intensity is commonly measured in units of power per steradian and power per area. The SI standard is power per steradian. Optek’s standard is power per area. Many customers will design their

Contextual Info: g OPTEK P roduct B ulletin OP906 June 1996 PIN Silicon Photodiode Type OP906 0 .0 5 5 ( 1 .4 0 ) TYP .1 5 0 , • 125 ( 3 . 1 8 ) .1 1 5 .1 0 0 (2 .9 2 ) .1 9 5 (4 .9 5 ) .1 8 5 (4 .7 0 ) .0 3 0 (2 .5 4 ) NOM (3 .6 1 ) \ Ly .0 2 5 (0 .6 4 ) .0 1 5 (0 .3 8 )