O220F Search Results

Contextual Info: Data Sheet Schottky barrier diode RB215T-60 Applications Switching power supply Dimensions Unit : mm Structure (1) (2) (3) Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability Construcion Silicon epitaxal planar ROHM : O220FN

P55NE

Abstract: P55NE06 O-220F 0022 morocco p55ne06l p55ne0 p55ne06lfp STP55NE06L STP55NE06LFP stp55ne06
Contextual Info: STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE STP55NE06L STP55NE06LF P • ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 28 A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dV/dt CAPABILTY

P20Ne06L

Abstract: p20ne06lfp STP20NE06LFP P20NE06 STP20NE06L O-220F morocco p20ne06lfp STripFET O220-F mosfet morocco
Contextual Info: STP20NE06L STP20NE06LFP  N - CHANNEL 60V - 0.07 Ω - 20 A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE STP20NE06L STP20NE06LF P • ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A TYPICAL RDS(on) = 0.07 Ω

IRF530

Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

BU941ZT

Abstract: BUB941ZT BU941Z BU941ZTFP
Contextual Info: BU941ZT/BU941ZTFP BUB941ZT  HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON • ■ ■ ■ ■ VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK TO-263 POWER PACKAGE IN TUBE (NO SUFFIX)

RFN20T

Contextual Info: RFN20TB4S Data Sheet Super Fast Recovery Diode RFN20TB4S zSerise Standard Fast Recovery zDimensions Unit : mm zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 zFeatures 1)Low switching loss 2)High current overload capacity

Contextual Info: Data Sheet Schottky barrier diode RB225T-60  Dimensions Unit : mm Applications Switching power supply Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability (1) (2) (3) Construction Silicon epitaxial planar

IRF530

Abstract: IRF530 IRF530FI IRF530F DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530
Contextual Info: IRF530 IRF530FI  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

p19nb20

Abstract: P19NB20FP p19nb20 morocco p19nb2 STP19NB20 STP19NB20FP
Contextual Info: STP19NB20 STP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V DSS R DS on ID STP19NB20 STP19NB20F P 200 V 200 V < 0.180 Ω < 0.180 Ω 19 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

O220F

Abstract: O-220F O220-F ST13007N ST13007NFP
Contextual Info: ST13007N ST13007NFP  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS ■

Contextual Info: Data Sheet Super Fast Recovery Diode RFN20TB4S zSerise Standard Fast Recovery zDimensions Unit : mm zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 zFeatures 1)Low switching loss 2)High current overload capacity

Contextual Info: Data Sheet Schottky barrier diode RB215T-90 Applications General rectification Common cathode dual chip Dimensions (Unit : mm) Structure (1) (2) (3) Features 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability Construction Silicon epitaxial planar

Contextual Info: Data Sheet Schottky Barrier Diode RB228T100 lApplications Switching power supply lDimensions Unit : mm 8.0 lFeatures 1)Cathode common type. 2)Low IR 3)High reliability 4)AEC-Q101 qualified lStructure lConstruction Silicon epitaxial planer 13.5MIN 1.2 1.3

p9nc60

Abstract: P9NC O-220F STP9NC60 STP9NC60FP 16L6 O220-F
Contextual Info: STP9NC60 STP9NC60FP  N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH ΙΙ MOSFET T YPE STP9NC60 STP9NC60FP ν ν ν ν ν V DSS R DS on ID 600 V 600 V < 0.75 Ω < 0.75 Ω 9.0 A 5.2 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY

11N60E

Abstract: FMV11N60E MS5F7023 fmv11n60 fuji D4701 DIODE marking le st ic MARKING QG MV11 O-220F MV11N60E
Contextual Info: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

13N60

Abstract: 13n60e ic MARKING QG ISO humidifier standards symbols
Contextual Info: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

gp7nb60hd

Abstract: smps control ic 393 STGP7NB60HD STGP7NB60HDFP STTA506 INTERNAL CIRCUIT OF IGBT GP7NB60h
Contextual Info: STGP7NB60HD STGP7NB60HDFP  N-CHANNEL 7A - 600V TO-220/FP PowerMESH IGBT TYPE STGP7NB60HD STGP7NB60HDFP • ■ ■ ■ ■ ■ ■ V CES V CE sat IC 600 V 600 V < 2.8 V < 2.8 V 7 A 7 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)

C4224

Abstract: STP60NE06-16 STP60NE06-16FP O220-F
Contextual Info: STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID STP60NE06-16 STP60NE06-16FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60 A 35 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY

SN278R12

Abstract: SN278R33 SN278R12PIC SN278 TO-252-5L SN278R33PIC TO252-5L
Contextual Info: SN N278R Rxxxx Low Dropoutt Voltage R Regulator 2 2.0A Series Semiconductor D Descriptio on httpp:// www.auk.co.kr T SN278Rxx is an efficient linear low ddropout voltag The ge regulator for fo v various electro onic equipmennt. It is designed to provide very low droppout

Contextual Info: Data Sheet Schottky Barrier Diode RB225T-40 Applications Switching power supply Dimensions Unit : mm Structure (1) (2) (3) Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability 13.5Min. Construction Silicon epitaxial planer

p7nb60

Abstract: STGP3NB60HD STGP3NB60HDFP STTA306 P7NB60hd STGP7NB60HDF
Contextual Info: STGP3NB60HD STGP3NB60HDFP  N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT TYPE STGP3NB60HD STGP3NB60HDFP • ■ ■ ■ ■ ■ ■ V CES V CE sat IC 600 V 600 V < 2.8 V < 2.8 V 3 A 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)

O220FP

Abstract: P16NB25 P16NB2 STP16NB25 STP16NB25FP
Contextual Info: STP16NB25 STP16NB25FP  N - CHANNEL 250V - 0.220Ω - 16A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID ST P16NB25 ST P16NB25FP 250 V 250 V < 0.28 Ω < 0.28 Ω 16 A 8 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.220 Ω EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: SD DB20 040PH H Schottky Barrier B Rectiffier 40 0V, 20A POWER R SCHOT TTKY RE ECTIFIER Fe eatures  Low L forward d voltage drrop  Low L power loss and Hiigh efficienccy  Low L leakage current  High H surge capability Pin Co onfiguration Pin 1: Cathode

gp7nb60hd

Abstract: GP7NB60h
Contextual Info: STGP7NB60HD STGP7NB60HDFP  N-CHANNEL 7A - 600V - TO-220/FP PowerMESH IGBT TYPE STGP7NB60HD STGP7NB60HDFP • ■ ■ ■ ■ ■ ■ V CES V CE sat IC 600 V 600 V < 2.8 V < 2.8 V 7 A 7 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)