fmv11n60
Abstract: FMV11N60E FMV11N60E,11N60E,FMV12N50E,12N50E
Contextual Info: FMV11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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fmv11n60eo-220ffmv11n60fmv11n60e,11n60e,fmv12n50e,12n50e |
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11N60E
Abstract: FMV11N60E MS5F7023 fmv11n60 fuji D4701 DIODE marking le st ic MARKING QG MV11 O-220F MV11N60E
Contextual Info: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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fmv11n60ems5f7023h04-004-05h04-004-03+811n60efmv11n60fuji d4701diode marking le stic marking qgmv11o-220fmv11n60e
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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usfb053usfb13usfb13ausfb13l+16usfb14usfz10vusfz11vusfz12vusfz13vusfz15vkf6n602sk3850 equivalentkf9n25kf7n50mdf10n65b transistorpanasonic zenerkf10n60kia278r12pi equivalentkid65003ap equivalentkia578r05
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