NTE232 Search Results

NTE2322

Abstract: DSA001397
Contextual Info: NTE2322 Silicon PNP Transistor Quad, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

NTE2325

Abstract: npn 10a 800v
Contextual Info: NTE2325 Silicon NPN Transistor High Voltage Switch Features: D High Reverse Voltage: VCBO = 900V Max D High Speed Switching: tf = 0.7µs (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

NTE2324

Abstract: NPN VCEO 800V
Contextual Info: NTE2324 Silicon NPN Transistor Color TV Horizontal Deflection Output Applications: D Color TV Horizontal Deflection Output Features: D High Speed tf = 100nsec D High Breakdown Voltage (VCBO = 1500V) D High Reliability (adoption of HVP process) Absolute Maximum Ratings:

NTE2328

Abstract: audio amplifier IC 810 IC 810 audio Power Amplifier ic 810 NTE2329
Contextual Info: NTE2328 NPN & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output TO3PBL Type Package Features: D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

nte2328

Abstract: audio amplifier IC 810
Contextual Info: NTE2328 NPN & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output Features: D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

Contextual Info: NTE2323 Silicon NPN Transistor Quad, Amplifier Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

Contextual Info: NTE2325 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)3 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

NTE2325

Contextual Info: NTE2325 Silicon NPN Transistor High Voltage Switch Features: D High Reverse Voltage: VCBO = 900V Max D High Speed Switching: tf = 0.7µs (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

to92 darlington

Abstract: nte232
Contextual Info: NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.

NPN Transistor VCEO 1000V

Abstract: NTE2327 250V transistor npn 2a transistor VCE 1000V
Contextual Info: NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings:

Contextual Info: NTE2321 Silicon NPN Transistor Quad, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

NTE2321

Contextual Info: NTE2321 Silicon NPN Transistor Quad, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

NTE2324

Contextual Info: NTE2324 Silicon NPN Transistor Color TV Horizontal Deflection Output TO3PML Type Package Applications: D Color TV Horizontal Deflection Output Features: D High Speed tf = 100nsec D High Breakdown Voltage (VCBO = 1500V) D High Reliability (adoption of HVP process)

NTE2320

Contextual Info: NTE2320 Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp Complementary Pair Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

TF 450

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.