NE761 Search Results

SG 2368

Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce­ ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its

NEC 3536

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •

low noise FET NEC U

Abstract: ym 238
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce­ ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.

ne76184a

Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Id s = 10 m A L O W N O IS E F IG U R E : 0.8 dB typical at 4 GHz 24 H IG H A S S O C IA T E D G A IN : 21 12 dB typical at 4 GHz 18 L g = 1.0 tu n , W g = 4 0 0 jim

817 CN

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz

Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES • LOW NOISE FIGURE: NF - 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: Ga = 12.0 dB typical at f = 4 GHz • Lg = 1.0 |im, W g = 400 Jim NE7610o NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Id s = 10 mA

D450 Nchannel

Abstract: C10535E NE76118 NE76118-T1 NE76118-T2 NEC 3536
Contextual Info: DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD package. in millimeters FEATURES 2.1±0.2 1.25±0.1 • Low noise figure PACKING STYLE

equivalent 4435

Contextual Info: GENERAL PURPOSE GaAs MESFET NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, los = 10 m A FEATURES LOW NOISE FIGURE: NF = 0.8 dB typical at f = 4 G Hz CO TJ HIGH ASSOCIATED GAIN: G a = 12.0 dB typical at f = 4 GHz Lq = 1.0 j.m , Wg = 400 (im

Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA LOW NOISE FIGURE: N F = 0.8 d B ty p ic a l at f = 4 G H z m "O HIGH ASSO CIATED GAIN: G a = 12.0 d B ty p ic a l at f = 4 G H z o z p T3 < Li_

NEC Ga FET marking L

Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.

ne325

Abstract: small signal GaAs FET RF Transistor Selection ne324
Contextual Info: Small Signal GaAs FET Selection Graph Minimum Noise Figure, NF Min dB 2 NE332 1 NE324 NE325 1 4 2 6 8 10 12 16 20 30 Frequency, f (GHz) Gain, GA (dB) 20 NE325 10 NE324 NE332 NE760 NE761 1 2 4 6 8 10 12 16 20 30 Frequency, f (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR

ic lg 631

Abstract: NE76118 TVRO
Contextual Info: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE76118 • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 20 • LOW NOISE FIGURE: 0.8 dB typical at 2 GHz Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz • LG = 1.0 µm, WG = 400 µm

Contextual Info: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package FEATURES NE76118 NOISE FIGURE & A SSO C IA T ED GAIN vs. FREQUENCY LOW CO ST MINIATURE PLASTIC PACKAGE (SOT-343) CD LOW NOISE FIGURE: < CD 0.8 dB typical at 2 GHz m •o HIGH A SSO CIA TED GAIN:

sem 2106

Abstract: 4957 GM
Contextual Info: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE76118 NOISE FIGURE & AS SO CIATED GAIN v s . FREQUENCY LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) m LOW NOISE FIGURE: < CD 0.8 dB typical at 2 GHz c cd HIGH ASSOCIATED GAIN: CD

NE67383

Contextual Info: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1

NEC Ga FET marking Rf

Abstract: nec gaas fet marking
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce­ ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.

NE76184A at 5 GHz

Abstract: NE76184A
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE: 24 0.8 dB typical at 4 GHz a> T} HIGH ASSOCIATED GAIN: 21 12 dB typical at 4 GHz 18 \£ 2 Lo s 1.0 im, Wo = 400

U/25/20/TN26/15/850/NE7611B

Contextual Info: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package FEATURES NE76118 NOISE FIGURE & ASSOCIATED G A IN vft. FREQUENCY V ds = 3 V, lo - 10 mA LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: < <D 0 .8 d B ty p ic a l a t 2 G H z

NE76100

Abstract: NE76100M NE76100N
Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of

4435 ag

Abstract: 5q 1265 rf
Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz

NE76118

Abstract: NE76118-T1 NE76118-T2
Contextual Info: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER • LOW COST MINIATURE PLASTIC PACKAGE SOT-343 25 4 20 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz • LG = 1.0 µm, WG = 400 µm • TAPE & REEL PACKAGING DESCRIPTION The NE76118 is a low cost gallium arsenide metal semiconductor field effect transistor housed in a miniature (SOT-343)

NE76184AS

Abstract: x-band power transistor NE76184A-SL NE76184A-TI
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184AS NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES 24 • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.0 µm, WG = 400 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE

TC-2303

Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its

NE76100

Abstract: NE76100M NE76100N
Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES DESCRIPTION Optimum Noise Figure, NFOPT dB • LG = 1.0 µm, WG = 400 µm 4 24 3.5 21 3 18 Ga 2.5 15 2 12 9 1.5 6 1 NF 0.5 3 NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure