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    NE674 Search Results

    NE674 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NE674
    		NEC Semiconductor Selection Guide Original PDF 3MB 399
    NE67400
    		California Eastern Laboratories Necs L To Ku Band Low Noise Amplifier N-channel Gaas Mesfet Original PDF 110.39KB 7
    NE67400
    		NEC L to Ku band low noise amplifier N-channel GaAs MESFET. Idss 20 to 120 mA. Original PDF 54.21KB 7
    NE67483B
    		California Eastern Laboratories NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET Original PDF 110.39KB 7
    NE67483B
    		NEC L to Ku band low noise amplifier N-channel GaAs MESFET. Idss 20 to 120 mA. Original PDF 54.21KB 7
    SF Impression Pixel

    NE674 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG TLE4957C2NE6747HAMA1

    - Ammo Pack (Alt: TLE4957C2NE6747HAMA1)
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    Avnet Americas TLE4957C2NE6747HAMA1 Ammo Pack 1,500
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    Rochester Electronics TLE4957C2NE6747HAMA1 47,656 1
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    Infineon Technologies AG TLE4983CHTNE6747HAMA1

    - Ammo Pack (Alt: TLE4983CHTNE6747HAMA1)
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    Avnet Americas TLE4983CHTNE6747HAMA1 Ammo Pack 18 Weeks 1,500
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    Rochester Electronics TLE4983CHTNE6747HAMA1 13,500 1
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    EBV Elektronik TLE4983CHTNE6747HAMA1 19 Weeks 1,500
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    Infineon Technologies AG TLE4983C-HTN E6747

    Board Mount Hall Effect / Magnetic Sensors SPEED SENS
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    Mouser Electronics TLE4983C-HTN E6747
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    Infineon Technologies AG TLE4957CNE6747HAMA1

    Magnetic Speed Sensor
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    Rochester Electronics TLE4957CNE6747HAMA1 61,876 1
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    Infineon Technologies AG TLE4926CHTNE6747HAMA1

    Magnetic Speed Sensors
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    Rochester Electronics TLE4926CHTNE6747HAMA1 3,498 1
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    NE674 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE674

    Abstract: NE67483 NE67483B
    Contextual Info: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m


    OCR Scan     		ne674ne67400ne67483bne67483 PDF

    NE674

    Abstract: NE67400 NE67483B 0840 057 0615
    Contextual Info: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz


    Original     		ne67400ne67483bne67424-hour+20840 0570615 PDF

    L to Ku Band Low Noise GaAs MESFET

    Contextual Info: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY


    OCR Scan     		ne67400ne67483bne674isl to ku band low noise gaas mesfet PDF

    NE67483

    Abstract: 1595S
    Contextual Info: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B NOISE FIGURE, ASSO CIATED GAIN • LOW NO ISE FIGURE: N F = 1.4 dB TYP a t f = at 1 2 G H z • HIG H A S S O C IA T E D GAIN: G a = 10 dB TYP at f = 12 GHz CQ •a u. • G ATE W ID TH : WG = 280 nm


    OCR Scan     		ne67400ne67483bis12ine67483+11595s PDF

    TRANSISTOR D434

    Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313
    Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm


    Original     		ne674ne67400ne67483btransistor d434+8d1859 transistord1585d1859d588 transistord998 transistortransistor d467d638 transistortransistor d313 PDF

    NE674

    Abstract: NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B
    Contextual Info: NE67400 NE67483B NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz


    Original     		ne67400ne67483bne67424-hour+3nec 3552ne67483package outline 83b PDF

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		x13769xj2v0cd00pc8119tpc8120tpc8130ta+16pc8131tapg175tapc2723tpc3206grpc2748pc27452sk2396pc2763pc1658ne272832sc35452sc33572sc2757ne932392sc2570apc2711 PDF

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd16305upd63724aupc5024upc50232sc1940upc1237upd65656upc458upc2710upd65943 PDF

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		x13769xj2v0cd00950mhz500mhzpc2794+13pc1687pc2744pc2775/nf025ne27283upc27x-band power transistor 100wne42484p147d2sk2396upg508nf025db2sc5408 PDF

    LORB

    Abstract: NE2720 NE334S01
    Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		ne23300ne24200ne27200ne67400+9ne32400ne32500ne32900ne33200ne325s01ne329s01lorbne2720ne334s01 PDF

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		ne68018ne680upa801tcupa808tc+16upa821tcupa826tcupa861tdupa831tcupa862tdupa835tcnec b1007t79 code markingc3206marking s16marking code c1hqfn marking t88c3h markingne02107t79 markingc3206g PDF

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd72002-11upd16305upc1237upc1701upd656562sd13922sb1099upd65625upd78f0841upg508 PDF

    NEC Ga FET marking L

    Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
    Contextual Info: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima


    OCR Scan     		get-30749ne29200ne674upg501b+13upg501pupg503bupg503pupg506bnec ga fet marking ltamagawagaas fet marking bmmic amplifier marking code n5ne272fet marking code .n5ne23383bne292gaas fet marking a PDF

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		x10679ejhv0sg00free transistor equivalent book 2scupa1556ahthe japanese transistor manual 1981+7samsung uhf/vhf tv tunermosfet cross-reference 2skpd431000a-xupper arm digital sphygmomanometer circuit diagrampd72001upc1237upc 2002 PDF