NDP6051 Search Results

NDB6051L

Abstract: NDP6051L 30D40 MJ48A
Contextual Info: N November 1996 NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48 A, 50 V. RDS ON = 0.023 Ω @ VGS= 5 V RDS(ON) = 0.018 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field

Contextual Info: November 1996 N NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: FA IR C H ILD MICDNDUCTQ R May1996 tm NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel en hance m en t m ode po w e r field effect tra nsistors are produced using Fairchild's proprietary, high cell

NDP6051L

Abstract: NDB6051L S1490 30d40
Contextual Info: November 1996 NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48 A, 50 V. RDS ON = 0.023 Ω @ VGS= 5 V RDS(ON) = 0.018 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field

NDP6051

Abstract: NDB6051
Contextual Info: May 1996 NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has

m 861

Abstract: NDB6051 NDP6051 GCMOz 225si T-50113
Contextual Info: é> Na t io na I Semiconductor'' M ay 19 96 NDP6051/ NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

24A28

Abstract: NDB6051L NDP6051 NDP6051L
Contextual Info: Novem ber 1996 N NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Contextual Info: t Q V NS e* mt ii co on na d\ u c t , o r . M ay 1996 ND P6051 / NDB6051 N-Channel Enhancement M ode Field Effect Transistor G e n e ral D e s c rip tio n F eatures T hese N -C h a n n e l e n h a n c e m e n t m o d e p o w e r fie ld • 4 8 A , 5 0 V . RDS 0N = 0 .0 2 2 0