NDH834P Search Results
NDH834P Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NDH834P |   | P-Channel Enhancement Mode Field Effect Transistor | Original | 87.15KB | 7 | ||
| NDH834P |   | P-Channel Enhancement Mode Field Effect Transistor | Original | 82.79KB | 8 | ||
| NDH834P |   | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | 
NDH834P Price and Stock
| Fairchild Semiconductor Corporation NDH834PTRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.3A I(D),SO | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | NDH834P | 158,148 | 
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|   | NDH834P | 5,549 | 
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NDH834P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| irf 1820Contextual Info: F A I R C H I L D M ay :m i c d n d u c t o r NDH834P P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSQT™-8 P-Channel enhancement mode power field - high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance | OCR Scan | NDH834P irf 1820 | |
| NDH834PContextual Info: May 1997 NDH834P P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density | Original | NDH834P NDH834P | |
| Contextual Info: F A I R C H I L D SEM ICONDUCTO R May 1997 tm NDH834P P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density | OCR Scan | NDH834P NDH834P | |
| NDH834PContextual Info: May 1997 NDH834P P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density | Original | NDH834P NDH834P | |
| NDH834PContextual Info: N September 1996 PRELIMINARY NDH834P P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is | Original | NDH834P NDH834P | |
| NDH834PContextual Info: s e m ic o n d u c t o r NDH834P P-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SuperSOT™-8 P-Channel enhancement mode power field - effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density | OCR Scan | NDH834P NDH834P | |
| thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp 
 | Original | ||
| mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L 
 | Original | 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L | |
| FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 
 | Original | SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 | |
| FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 
 | Original | UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 | |
| SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent 
 | Original | 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent | |
| FDR4420A
Abstract: FDC637AN Complementary MOSFETs FDR8305N FDS8928 FDR6580 FDR6674A FDR6678A FDS8928A FDS8958A 
 | Original | FDR8305N NDH831N FDR6580 FDR6674A FDR4420A FDR6678A FDC637AN NDH8321C FDR836P FDR838P FDR4420A FDC637AN Complementary MOSFETs FDR8305N FDS8928 FDR6580 FDR6674A FDR6678A FDS8928A FDS8958A | |
| YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 
 | Original | 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 | |
| ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 
 | Original | F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 | |
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| FQPf10N60C
Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08 
 | Original | FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08 | |