MMBT2222AW Search Results

Contextual Info: MMBT2222AWT1G, MMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. http://onsemi.com

Contextual Info: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES FEATURES • · · Epitaxial Epitaxial Planar Planar Die Die Construction Construction SOT-323 A Complementary PNP

Contextual Info: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

MMBT2907AW

Abstract: MMBT2222AW
Contextual Info: MMBT2907AW PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE    A Complementary NPN Type Available MMBT2222AW Epitaxial Planar Die Construction

Contextual Info: WILLAS FM120-M+ THRU MMBT2222AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

MMBT2222AW

Contextual Info: MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Value Symbol Unit MMBT2222W MMBT2222AW Collector Base Voltage VCBO 60 75 V Collector Emitter Voltage

Contextual Info: Product specification MMBT2222AW Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO

MMBT2222AW

Contextual Info: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE    Complementary PNP Type Available MMBT2907AW Epitaxial Planar Die Construction

Contextual Info: MMBT2222AWT1G, MMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. http://onsemi.com

Contextual Info: MMBT2222AW 3 * “G” Lead Pb -Free 1 2 SOT-323(SC-70) VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

MMBT2222AW

Contextual Info: MMBT2222W / MMBT2222AW NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value MMBT2222W MMBT2222AW Unit Collector Base Voltage VCBO 60 75 V Collector Emitter Voltage

1n914 SOT323

Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which7 is designed for low power surface mount applications. http://onsemi.com

M2A transistor

Abstract: 1N914 MMBT2222AW TRANSISTOR SE 135 1n914 sot
Contextual Info: DATA SHEET MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Collector current IC = 600mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb

1N914

Abstract: MMBT2222AWT1
Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com

Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com

marking 6AA SOD

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is

M2A transistor

Contextual Info: MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit：inch mm • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V 0.087(2.20) 0.070(1.80) • Collector current IC = 600mA • / 

MARKING P1 TRANSISTOR

Abstract: TRANSISTOR SMD p1 smd transistor marking p1 FR MARKING SMD TRANSISTOR smd TRANSISTOR marking ku transistor SMD f 833 SMD TRANSISTOR MARKING BR MMBT2222AW X10-4
Contextual Info: Transistors IC SMD Type General Purpose Transistor MMBT2222AW Features General purpose transistor. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75

Contextual Info: Bipolar Transistors Switching Transistors NPN − MMBT3904WT1 − MMBT2222AWT1 MMBT4401WT1 − MMBT3904TT1 − MMBT2222ATT1 PNP MMBT2907AWT1 − MMBT3906WT1 − − MMBT4403WT1 − MMBT3906TT1 − V BR CEO IC mA Max Min 60 40 40 40 40 40 600 200 200 600 600

Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com

1N914

Abstract: MMBT2222AWT1 SMD310
Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com

1N914

Abstract: MMBT2222AWT1 MMBT2222AWT1G
Contextual Info: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. http://onsemi.com

BT2222AW

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applica­ tions. They are housed in the S O T -3 2 3 /S C -7 0 package which is

MMBT2222AWT1

Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon MMBT2222AWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount