MIP501 Search Results

Contextual Info: Panasonic Intelligent Power Devices IPDs MIP501, MIP502 Silicon M OS IC • Features • High breakdown voltage, N-Ch MOS FET output (Voss > 40V Ron < 0.5il) • Over-current-protection function built-in • Reset function built-in • Direct drive possible by the logic circuit

MIP16

Abstract: mip02 MIP2 MIP501 MIP502 MIP55
Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) Over-current-protection function built-in 4.5±0.2 0.65±0.1 0.85±0.1 Direct drive possible by the logic circuit • Applications ● 0.65±0.1

HT 10

Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1

Intelligent Power Devices

Abstract: panasonic fc 10 "Intelligent Power Devices"
Contextual Info: Panasonic Intelligent Power Devices IPDs MIP501, MIP502 Silicon M OS IC Unit : rmn • Features • High breakdown voltage, N-Ch MOS FET output (V d s s > 40V Ron < 0.5£2) • Over-current-protection function built-in • Reset function built-in • Direct drive possible by the logic circuit

Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1

"Intelligent Power Devices"

Abstract: Intelligent Power Devices MIP501 MIP502
Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1

"Intelligent Power Devices"

Abstract: MIP501 MIP502
Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1

"Intelligent Power Devices"

Abstract: Intelligent Power Devices MIP501 MIP502
Contextual Info: Panasonic Intelligent Power Devices IPDs M IP 5 0 1 , M IP502 Silicon M OS IC Unit : mm • Features • High breakdown voltage, N-Ch MOS FET output (V dss > 40V Ron < 0.5 il) • Over-current-protection function built-in • Reset function built-in • Direct drive possible by the logic circuit

MIP9E01

Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply

MIP9E01

Abstract: mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit

Matsua de

Abstract: MIP9E01 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 ● Single chip IC of protection function circuit

MIP9E01

Abstract: MIP9E02 MIP805 MIP709
Contextual Info: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in

MIP9E01

Abstract: MIP0122SY MIP9E02 TO-220-A1 MIP0123SY MIP0125SY MIP816 MIP0123 matsua CHARGER ipd mip2
Contextual Info: Intelligent Power Devices IPDs MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.

MIP9E01

Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

MIP9E01

Abstract: MIP9E02
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated

MIP9E01

Abstract: MIP9E02 MIP0222 MIP0222SU matsua CHARGER mip0221
Contextual Info: Intelligent Power Devices IPDs MIP0221SU, MIP0222SU Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.

MIP9E01

Abstract: MIP9E02 MIP161 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP161 Silicon MOS IC • Features unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 1.0±0.1 0.1±0.05 0.93±0.1 0.8max 2.5±0.1 ■ Applications ● Switching power supply (to 5W) ● AC adaptor ● Battery charger 0.5±0.1 1.8±0.1 7.3±0.1

MIP2E3DMY

Abstract: MIP2E3D mosfet mar 709 MIP2E3 mip2e mip2 MIP806 MIP16 mip* 282 mip2e3dmy equivalent
Contextual Info: インテリジェントパワーデバイス IPD MIP2E3DMY シリコンMOS形集積回路 • 特 長 Unit : mm 2.8±0.2 1.5±0.2 15.4±0.3 φ 3.7±0.2 ■ 絶対最大定格 Ta = 25°C ± 3°C 1.4±0.1 定格 単位 ドレイン電圧 VD 700 V コントロール電圧

k3025

Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
Contextual Info: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8

MIP9E01

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP115 Intelligent Power Devices IPDs MIP115 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit

IPD Converter

Abstract: MIP806 MIP814 MIP02 foreign exchange companies MIP2 MA2Z001 MIP501 MIP704 MIP805
Contextual Info: New L a r g e - s c r e e n E L D r i ve r M I P 8 1 4 • Overview Unit : mm Part A 4.3±0.2 0.25±0.1 10 9 8 7 6 123 4 5 0.5±0.07 12˚ 6.3±0.2 MIP814 is an IPD Intelligent Power Device that can drive large-screen EL display units with low current to deliver exceptionally bright pictures. Its

MIP51

Abstract: MIP806 MIP803 MIP501 MIP704 MIP805 MIP824 MIP825 MIP826 MIP2
Contextual Info: New EL Display Driving IPD Series with Built-in Diode MIP824/MIP825/MIP826 „ Overview Unit : mm This series of IPDs Intelligent Power Devices incorporates a diode which formerly was connected externally. It can drive an EL display with high brightness and low power consumption.

Matsua & SAW & IF

Contextual Info: MIP102 Intelligent Power Devices IPDs MIP102 For CMOS Type Switching Power Control Unit : mm ● Single chip IC with control circuit and output power MOS FET ● Various protective functions built-in : over-current/over-heat protec- 0.45 • Features 1 28