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    MBT2222A Search Results

    MBT2222A Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MBT2222A
    Unknown Silicon Planar Epitaxial Transistors N-P-N TRANSISTORS Original PDF 40.56KB 1
    MBT2222ADW
    Weitron Dual General Purpose Transistors Original PDF 376.17KB 6
    MBT2222ADW1T1
    On Semiconductor General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 Original PDF 159.96KB 6
    MBT2222ADW1T1
    On Semiconductor General Purpose Transistor Original PDF 93.25KB 8
    MBT2222ADW1T1
    On Semiconductor General Purpose Transistor Original PDF 91.08KB 8
    MBT2222ADW1T1-D
    On Semiconductor General Purpose Transistor NPN Silicon Original PDF 91.08KB 8
    MBT2222ADW1T1G
    On Semiconductor TRANS GP BJT NPN 40V 0.6A 6SOT-363 T/R Original PDF 100.73KB 6
    badge MMBT2222A
    Microdiode Semiconductor (MDD) Small Signal Bipolar Transistor Original PDF
    SF Impression Pixel

    MBT2222A Price and Stock

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    onsemi MBT2222ADW1T1G

    Trans GP BJT NPN 40V 0.6A 150mW 6-Pin SC-88 T/R
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    Verical MBT2222ADW1T1G 81,000 3,000
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    Arrow Electronics MBT2222ADW1T1G Cut Strips 6 72 Weeks 1
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    RS MBT2222ADW1T1G Bulk 200
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    Onlinecomponents.com MBT2222ADW1T1G 81,000
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    Quest Components () MBT2222ADW1T1G 664
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    MBT2222ADW1T1G 664
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    MBT2222ADW1T1G 288
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    MBT2222ADW1T1G 288
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    TME MBT2222ADW1T1G 1
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    ComSIT USA MBT2222ADW1T1G 27,515
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    EBV Elektronik MBT2222ADW1T1G 46 Weeks 3,000
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    Master Electronics MBT2222ADW1T1G 81,000
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    onsemi MBT2222ADW1T

    MBT2222ADW1T
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    Verical MBT2222ADW1T 15,400 13,275
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    Rochester Electronics MBT2222ADW1T 15,400 1
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    Diodes Incorporated MMBT2222A-7-F

    Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 300 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222A-7-F)
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    Avnet Americas MMBT2222A-7-F Tape & Reel 3,756,000 3,000
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    Newark MMBT2222A-7-F Tape & Reel 48,000 3,000
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    Chip 1 Exchange MMBT2222A-7-F 3,000
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    Avnet Silica MMBT2222A-7-F 46 Weeks 3,000
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    Component Electronics, Inc MMBT2222A-7-F 10,996
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    Win Source Electronics MMBT2222A-7-F 573,000
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    onsemi MMBT2222ALT3G

    Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222ALT3G)
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    Avnet Americas MMBT2222ALT3G Tape & Reel 1,440,000 10,000
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    Newark () MMBT2222ALT3G Cut Tape 12,751 1
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    MMBT2222ALT3G Tape & Reel 12,751 10
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    TME MMBT2222ALT3G 10,000
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    Avnet Asia MMBT2222ALT3G 52 Weeks 80,000
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    Avnet Silica MMBT2222ALT3G 40,000 53 Weeks 10,000
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    EBV Elektronik MMBT2222ALT3G 220,000 53 Weeks 10,000
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    Master Electronics MMBT2222ALT3G 470,000
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    Win Source Electronics MMBT2222ALT3G 938,380
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    onsemi MMBT2222ALT1G

    - Tape and Reel (Alt: MMBT2222ALT1G)
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    Avnet Americas MMBT2222ALT1G Tape & Reel 228,000 60 Weeks 3,000
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    Newark () MMBT2222ALT1G Tape & Reel 26,205 10
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    MMBT2222ALT1G Cut Tape 26,205 1
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    MMBT2222ALT1G Tape & Reel 15,000 3,000
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    Rochester Electronics MMBT2222ALT1G 3,636 1
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    TME MMBT2222ALT1G 38,231 1
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    ComSIT USA MMBT2222ALT1G 60,695
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    Chip 1 Exchange () MMBT2222ALT1G 68,678
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    MMBT2222ALT1G 8,641
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    Avnet Asia MMBT2222ALT1G 375,000 60 Weeks 75,000
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    Avnet Silica MMBT2222ALT1G 1,170,000 53 Weeks 3,000
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    EBV Elektronik MMBT2222ALT1G 1,137,000 53 Weeks 3,000
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    Flip Electronics MMBT2222ALT1G 1,954,500
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    Master Electronics MMBT2222ALT1G 888,000
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    MBT2222A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N914

    Abstract: MBT2222ADW1T1 MBT2222ADW1T1G MBT2222
    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V 3 • Pb−Free Package is Available Symbol Value Unit Collector−Emitter Voltage


    Original
    mbt2222adw1t1mbt2222adw1t1/d1n914mbt2222adw1t1g+1mbt2222 PDF

    MARKING 318 SC70-6

    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc


    Original
    mbt2222adw1t1sc-88/sc70-6/sot-363marking 318 sc70-6 PDF

    MBT2222ADW1T1

    Abstract: 1N914
    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model – 4 kV ESD Rating: Machine Model – 400 V http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage


    Original
    mbt2222adw1t1r14525mbt2222adw1t1/d1n914 PDF

    sot363 3ft

    Abstract: 3Ft SOT363 1N914 MBT2222ADW 3Ft sot
    Contextual Info: MBT2222ADW Dual General Purpose Transistors NPN+NPN Silicon 2 3 1 6 5 1 4 5 6 2 4 3 SOT-363 SC-88 NPN+NPN VCEO (1) Value 150 833 TJ ,Tstg -55 to+150 MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint


    Original
    mbt2222adwot-363sc-88150madc+4sot363 3ft3ft sot3631n9143ft sot PDF

    "dual TRANSISTORs" pnp npn

    Abstract: BC847CPDW1T1 dual pnp BC858CDW1T1
    Contextual Info: Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1


    Original
    sc-88ot-363419b-02ot-563+763a-01so-16751b-05dual transistors" pnp npnbc847cpdw1t1dual pnpbc858cdw1t1 PDF

    1N914

    Abstract: MBT2222ADW1T1
    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc


    Original
    mbt2222adw1t1sc-88/sc70-tmbt2222adw1t1/d1n914 PDF

    marking 1b

    Abstract: MBT2222 MBT2222A 1985_MBT2222A
    Contextual Info: MBT2222 MBT2222A MBT222/MBT222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS 1 3 ABSOLUTE MAXIMUM RATINGS 2 Descriptions Symbol Tstg Tj Ptot VCBO VCEO VEBO IC Storage Temperature Junction Temperature Maximum Power Dissipation Ta=25 C Maximum Collector to Base Voltage


    Original
    mbt2222mbt2222ambt222/mbt222ambt222+3mbt222amarking 1b1985_mbt2222a PDF

    Contextual Info: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage


    Original
    mbt2222adw1t1gmbt2222adw1t1/d PDF

    1N914

    Abstract: 419B-02 MBT2222ADW1T1 MBT2222ADW1T1G on semiconductor marking code 1P
    Contextual Info: MBT2222ADW1T1 General Purpose Transistor NPN Silicon Features •ăMoisture Sensitivity Level: 1 •ăPb-Free Package is Available http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage


    Original
    mbt2222adw1t1mbt2222adw1t1/d1n914419b-02+2mbt2222adw1t1gon semiconductor marking code 1p PDF

    Contextual Info: MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http://onsemi.com Features • Moisture Sensitivity Level: 1 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original
    mbt2222adw1nsvbt2222adw1aec-q101sc-88/sc70-6/sot-363+1mbt2222adw1t1/d PDF

    1N914

    Abstract: MBT2222ADW1T1G
    Contextual Info: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage


    Original
    mbt2222adw1t1gmbt2222adw1t1/d1n914 PDF

    sot363 3ft

    Abstract: 1N914 MBT2222ADW 3Ft SOT363 3Ft sot
    Contextual Info: MBT2222ADW Dual General Purpose Transistors NPN+NPN Silicon 2 3 1 * “G” Lead Pb -Free 6 5 1 4 5 6 2 4 3 SOT-363(SC-88) NPN+NPN VCEO (1) Value 150 833 TJ ,Tstg -55 to+150 MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint


    Original
    mbt2222adwot-363sc-88150madc+4sot363 3ft1n9143ft sot3633ft sot PDF

    FR4 epoxy dielectric constant 4.4

    Abstract: e/AT-33225-BLK
    Contextual Info: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency


    OCR Scan
    at-33225ot-223at-33225965-5910e+344475a4fr4 epoxy dielectric constant 4.4e/at-33225-blk PDF

    Contextual Info: Thal H E W L E T T mLEMP A C K A R D 4.8 V NPN Common E m itter Output Power Transistor for GSM Class IV Phones Technical Data AT-36408 F eatu res • 4.8 Volt Pulsed Operation pulse width = 577 usee, duty cycle = 12.5% • +35.0 dBm Pout @ 900 MHz, Typ.


    OCR Scan
    at-364085965-5960e4447sa4 PDF

    BT2222A

    Abstract: MMBT2222ALT1 1P BT2222
    Contextual Info: M AXIMUM RATINGS Symbol M MBT2222 MBT2222A Unit C o lle c to r -E m itte r V o lta g e Rating V CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 C o lle c to r C u rre n t — C o n tin u o u s 6.0


    OCR Scan
    mbt2222mmbt2222ammbt2222lt1mmbt2222alt1+6ot-23o-236abmbt2222abt2222ammbt2222alt1 1pbt2222 PDF

    T2222A

    Abstract: BT2222ALT1 BT2222
    Contextual Info: MAXIMUM RATINGS Symbol MMBT2222 MBT2222A Unit C o lle ctor-E m itter Voltage VCEO 30 40 Vdc C ollector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 Rating C o lle ctor C u rrent — C o ntinuous Vdc 6,0 600 C MMBT2222LT1 MBT2222ALT1* m A dc


    OCR Scan
    mmbt2222mmbt2222ammbt2222lt1mmbt2222alt1+5ot-23ito-236abt2222abt2222alt1bt2222 PDF

    Contextual Info: Thlïï H EW L E T T K KÆPA CK A R D 4.8 V NPN Common Em itter Output Power Transistor for GSM Class IV Phones Technical Data AT-36408 Features • 4.8 Volt Pulsed Operation pulse width = 577 |isec, duty cycle = 12.5% SOIC-8 Surface Mount Plastic Package


    OCR Scan
    at-36408 PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    cy8c38cy8c29incl79512t9797+1612t980412t980312t980012t980212t980112t9805arduino mega256013001 s 6d transistorarduino uno rev 3agilent optical encoder 9988mz 13001 transistorarduino mega 2650skiip 613 gb 123 ctarduino sound sensor module picarduino nanomc34063l PDF

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


    Original
    1ss383t12n38192n39032n3904+162n39062n44012n44032n50872n50882n5089bc237bc847bpdw1t1 seriesbc548low noise transistors bc638cbc550cbc3072n5550* surface mountbc212bsr58lt1nsdemn11xv6t1 PDF

    MBT2222 equivalent

    Abstract: MARKING M1B
    Contextual Info: WILLAS FM120-M+ THRU MMBT2222 A LT1 FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features NPN •Silicon Batch process design, excellent power dissipation offers


    Original
    fm120-mmmbt2222fm1200-mod-123+8od-123hfm150-mhfm160-mhfm180-mhfm1100-mhfm1150-mhmbt2222 equivalentmarking m1b PDF

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original
    ot323bc818wmun5131t1bc846a+12smbt3904mvn5131t1transistor smd s72nec mys 501mys 99transistor 8bb smdst mys 99 102kvp 81akvp 81a diodekvp 69akvp 86asmd transistor a7p PDF

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Contextual Info: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original
    sgd501/d74vcx16373dt74vcx16373dtr74vcx16374dt+1416bit74vcx16374dtr80sq045n80sq045nrl1500w audio amplifier circuitschottky diode 80v 6a1500w pwm 220vc106mgmarking code ss sot23tl494cn inverter datasheetsmps 1500wmmsz5231bt1gdc 220v motor speed control circuit with scrncp1200p60g PDF

    FZH 161

    Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
    Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency


    OCR Scan
    at-31625ot-2235965-5911efzh 161+9fzh 111fzh 181transistor i 17-13 0773cbc 184 transistorfzh 175s3230fzh 165fzh 165 bfzh 171 PDF

    ANA 618

    Abstract: voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE
    Contextual Info: SGD501/D REV 13, April 12, 2003 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION - Please see General Information Section EFFECTIVE DATE: APRIL 12, 2003  General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original
    sgd501/dana 618voltage regulator ana 618nzsmb15cat3+7gp 809 diode1500w audio amplifier circuitspeed control of dc motor tda1085ccs5170ana 618* voltage regulator12 volt 2 amp smpsdiode 1n4007 mic make PDF