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MBR4015LWTG Datasheets (1)

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On Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MBR4015LWTG		On Semiconductor	40A 15V Schottky Rectifier	Original	PDF	65.31KB	5

MBR4015LWTG Price and Stock

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onsemi


onsemi MBR4015LWTG Diode Schottky 15V 40A 3-Pin(3+Tab) TO-247 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	MBR4015LWTG		190		78	1 - 10 - 100 $4.63 1000 $4.14 10000 $3.89	Buy Now
	MBR4015LWTG		97		78	1 - 10 - 100 $4.63 1000 $4.14 10000 $3.89	Buy Now
	MBR4015LWTG		90		78	1 - 10 - 100 $4.63 1000 $4.14 10000 $3.89	Buy Now
Avnet Americas ()	MBR4015LWTG	Tube			240	1 - 10 - 100 - 1000 $3.15 10000 $3.01	Buy Now
	MBR4015LWTG	Tube			150	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	MBR4015LWTG		863		1	1 - 10 - 100 $3.70 1000 $3.31 10000 $3.11	Buy Now
Flip Electronics	MBR4015LWTG		330			1 $2.33 10 $2.33 100 $2.33 1000 $2.33 10000 $2.33	Get Quote

MBR4015LWTG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MBR4015LWTG Switch Mode Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwtg mbr4015lwt/d	PDF
MBR4015LWT Abstract: MBR4015LWTG Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d mbr4015lwtg	PDF
Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d	PDF
B4015L Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package Employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d b4015l	PDF
MBR4015 Abstract: MBR4015LWT MBR4015LWTG Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d mbr4015 mbr4015lwtg	PDF
MBR4015LW Abstract: MBR4015LWT MBR4015LWTG Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d mbr4015lw mbr4015lwtg	PDF
Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d	PDF