MBR12080CT Search Results

MBR12080CT Datasheets (8)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MBR12080CT		America Semiconductor	HIGH POWER-SCHOTTKY RECTIFIERS; IF::120A; case_package::Twin Tower Modules	Original	PDF	1.02MB	2
MBR12080CT		GeneSiC Semiconductor	Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 80V 120A 2TOWER	Original	PDF		3
MBR12080CT		Micro Commercial Components	120 Amp Schottky Barrier Rectifier	Original	PDF	131.88KB	3
MBR12080CT		America Semiconductor	MBR12080 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::120A; case_package::Twin Tower Modules	Scan	PDF	246.29KB	1
MBR12080CT		Microsemi	Schottky Rectifier	Scan	PDF	155.42KB	2
MBR12080CTR		America Semiconductor	HIGH POWER-SCHOTTKY RECTIFIERS; IF::120A; case_package::Twin Tower Modules	Original	PDF	1.02MB	2
MBR12080CTR		GeneSiC Semiconductor	Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 80V 120A 2TOWER	Original	PDF		3
MBR12080CTR		America Semiconductor	MBR12080 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::120A; case_package::Twin Tower Modules	Scan	PDF	246.29KB	1

MBR12080CT Price and Stock

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Navitas Semiconductor


Navitas Semiconductor MBR12080CT - Bulk (Alt: MBR12080CT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MBR12080CT	Bulk		10 Weeks	40	1 - 10 - 100 $82.31 1000 $74.58 10000 $74.58	Buy Now
Navitas Semiconductor MBR12080CTR - Bulk (Alt: MBR12080CTR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MBR12080CTR	Bulk		10 Weeks	40	1 - 10 - 100 $82.31 1000 $74.58 10000 $74.58	Buy Now

MBR12080CT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
203CNQ080 Abstract: 203CNQ100 CPT200100 CPT20080 CPT20090 MBR120100CT MBR12080CT MBR200100CT MBR20080CT Contextual Info: Schottky PowerMod CPT20080-CPT200100 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT20080* 203CNQ080 MBR12080CT MBR20080CT CPT20090* CPT200100* 203CNQ100	Original	cpt20080-cpt200100 cpt20080 203cnq080 mbr12080ct +6mbr20080ct cpt20090 cpt200100 203cnq100 mbr120100ct mbr200100ct	PDF
203CNQ080 Abstract: 203CNQ100 CPT200100 CPT20080 CPT20090 MBR120100CT MBR12080CT MBR200100CT MBR20080CT Contextual Info: Schottky PowerMod CPT20080—CPT2001 00 ¥ Baseplate A=Common Anode V Baseplate Common Cathode 1 u — 1 / T \ É ! / i V ! i c I Microsemi Catalog Number Industry P art Number CPT20080* 203CNQ080 MBR12080CT MBR20080CT °N \| W ° i Baseplate D=Doubler Notes:	OCR Scan	cpt20080 cpt2001 203cnq080 203cnq100 +6cpt200100 cpt20090 mbr120100ct mbr12080ct mbr200100ct mbr20080ct	PDF
203CNQ080 Abstract: 203CNQ100 CPT200100 CPT20080 CPT20090 MBR120100CT MBR12080CT MBR20080CT Contextual Info: ¥ ¥ Baseplate A=Common Anode Baseplate Common Cathode u "1 1 1 H -1— 1 H u h \l i \ h - 1— 1- / °N \| W ° I c Baseplate D=Doubler -I Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Industry Part Number CPT20080 203CNQ080 MBR12080CT	OCR Scan	f20080 r200i cpt20080 cpt20090 +6cpt200100 203cnq080 203cnq100 mbr120100ct mbr12080ct mbr20080ct	PDF
t 63 n 1200 Contextual Info: MCC MCC Part Number M a x ip u n 1 Average Forward Current Peak j @ Half-Wave Reverse I Resistive Load YpKage I 60Hz . ',\| If î a v @ T a Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current @ PRV @ 25°C Ta Ir If m V fm A mAdc A V o	OCR Scan	fst12020 fst12030 fst12035 fst12040 +7fst12045 fst12060 fst12080 fst120100 mbr12020 mbr12030 t 63 n 1200	PDF
Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 120 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)	Original	mbr12045ct mbr120100ctr mbr12060ct mbr12080ct +1mbr120100ct	PDF
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR12020CT R THRU MBR120100CT(R) SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability 120Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175	Original	mbr12020ct mbr120100ct 120amp mbr12035ct +5mbr12030ct mbr12040ct mbr12045ct mbr12060ct mbr12080ct	PDF
Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	mbr12045ct mbr120100ctr mbr12060ct mbr12080ct +1mbr120100ct	PDF
Contextual Info: Naina Semiconductor Ltd. MBR12045CT thru MBR120100CTR Silicon Schottky Diode, 120A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified	Original	mbr12045ct mbr120100ctr mbr12060ct mbr12080ct +1mbr120100c	PDF
Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	mbr12045ct mbr120100ctr mbr12060ct mbr12080ct +1mbr120100ct	PDF
MBR12020CT Contextual Info: MCC MBR12020CT omponents 21201 Itasca Street Chatsworth !"# $ % !"# THRU MBR120100CT Features • • • • 120 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton	Original	mbr12020ct mbr120100ct mbr12030ct mbr12035ct +4mbr12040ct mbr12045ct mbr12060ct mbr12080ct	PDF
MBR12060CT Abstract: MBR120100CT MBR12045CT MBR12080CT Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	mbr12045ct mbr120100ctr mbr12060ct mbr12080ct +1mbr120100ct	PDF
B2X84C12 Abstract: MBR30100 MBR400100CT RS1005M UF5407G mur640 fst83100 MBR1535 MUR140G BC548 Contextual Info: MCC P A R T IN D E X PART NUMBER 1-5KE10 C {A) 1.5KE100(C)(A) 1-5KE11(C)(A) 1.5KE110fC)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1-5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C){A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1-5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)	OCR Scan	1-5ke10 5ke100 1-5ke11 5ke110fc +165ke12 5ke120 1-5ke13 5ke130 5ke15 5ke150 b2x84c12 mbr30100 mbr400100ct rs1005m uf5407g mur640 fst83100 mbr1535 mur140g bc548	PDF
MBR12020CT(R) Abstract: Twin Tower Contextual Info: MBR 12020C T R DACO SEMICONDUCTOR CO., LTD. MBR 120100CT(R) T HRU SCHOTTKY DIODE MODULE TYPES 120A Features 120Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings A R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150	Original	12020c 120100ct 120amp mbr12020ct +8mbr12030ct mbr12035ct mbr12045ct mbr12060ct mbr12040ct mbr12080ct mbr12020ct(r twin tower	PDF
MBR120100CT Abstract: MBR12020CT MBR12030CT MBR12035CT MBR12040CT MBR12045CT MBR12060CT MBR12080CT mbrf1201 MBR1200 Contextual Info: Transys MBR12020CT R THRU MBR120100CT(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability 120Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175	Original	mbr12020ct mbr120100ct 120amp mbr12035ct +7mbr12030ct mbr12040ct mbr12045ct mbr12060ct mbr12080ct mbrf1201 mbr1200	PDF