MAX220 Search Results

STU16NC50

Contextual Info: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STU6NA100

Contextual Info: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED

STU11NB60

Contextual Info: STU11NB60 N-CHANNEL 600V - 0.5Ω - 11A Max220 PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STU11NB60 600V < 0.6Ω 11 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STU10NB80

Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STU7NA90

Abstract: sd 50 diode
Contextual Info: STU7NA90 N - CHANNEL 900V - 1.05 Ω - 7A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU7NA90 900 V < 1.3 Ω 7A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED

MAX2207

Abstract: MAX2206 MAX2206EBS MAX2207EBS MAX2208 MAX2205 MAX2205EBS
Contextual Info: 19-2015; Rev 1; 4/02 KIT ATION EVALU E L B A IL AVA RF Power Detectors in UCSP Features The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

MAX232AEWE

Abstract: max222 MAX233ACPP
Contextual Info: yi/iyjxi/i/i 19-289, Rev.O; 4/91 H igh-Speed +5V-P ow ered R S -232 D rivers/R eceivers _ ♦ 116kbits/sec Guaranteed Data Rate except MAX220 MAX220: A low-power, pin-compatible upgrade of the MAX232, with a typical supply current of only 0.5mA.

0413A

Abstract: STU13NC50
Contextual Info: STU13NC50 N-CHANNEL 500V - 0.31Ω - 13A Max220 PowerMesh II MOSFET TYPE STU13NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.4 Ω 13 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STU16NC50

Contextual Info: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

5962-9456504mva

Abstract: MX7502SQ 428M MX753747 IH5048
Contextual Info: SCOPE: +5V-POWERED MULTI-CHANNEL RS-232 DRIVERS/RECEIVERS Device Type 01 02 03 04 05 Generic Number MAX220 x /883B MAX222(x)/883B MAX232A(x)/883B MAX242(x)/883B MAX243(x)/883B Pkg Code J16 & L20 J18 & L20 J16 & L20 J18 & L20 J16 & L20 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Contextual Info: STU7NB100 N - CHANNEL 1000V - 1.2 ft - 7.3A - Max220 _ PowerMESH MOSFET PRELIM IN ARY DATA TYPE S T U 7N B 1 00 . . . . . . . V dss RDS on Id 1000 v < 1.5 a 7.3 A TYPICAL RDS(on) = 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

IS-98-A

Abstract: UCSP4 marking B44
Contextual Info: 19-2015; Rev 6; 9/06 KIT ATION EVALU E L B AVAILA RF Power Detectors in UCSP The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

max232 free

Abstract: MAX249 AUO-M201.1F pdf MAX222CPN 90-0108 MAX232EJE 8 PIN Plastic DIP land pattern max233acw
Contextual Info: 19-4323; Rev 15; 1/06 +5V-Powered, Multichannel RS-232 Drivers/Receivers Next-Generation Device Features The MAX220–MAX249 family of line drivers/receivers is intended for all EIA/TIA-232E and V.28/V.24 communications interfaces, particularly applications where ±12V is

u16nb50

Abstract: STU16NB50
Contextual Info: STU16NB50 N-CHANNEL 600V - 0.45Ω - 10.7A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE ST U16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STU26NM50 STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET PRELIMINARY DATA TYPE STU26NM50 STU26NM50I n n n n n VDSS RDS on ID 500V 500V < 0.120Ω < 0.120Ω 26 A 26 A TYPICAL RDS(on) = 0.01Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

WLP 1500

Contextual Info: 19-5493; Rev 0; 9/10 TION KIT EVALUA BLE IL AVA A RF Power Detector with Shutdown Control The MAX2209A is a wideband 800MHz to 2GHz RF power detector. It takes an RF signal from the directional coupler at the input, and outputs a DC voltage proportional to the RF peak voltage. The change in output

MAX249

Abstract: max235mdg MAX232C MAX232AEWE MAX244 MAX232AESE MAX242 MAX232ACWE MAX243 MAX232
Contextual Info: 19-4323; Rev 15; 1/06 +5V-Powered, Multichannel RS-232 Drivers/Receivers The MAX220–MAX249 family of line drivers/receivers is intended for all EIA/TIA-232E and V.28/V.24 communications interfaces, particularly applications where ±12V is not available.

STE30NA50-DK

Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000

STU11NB60

Contextual Info: STU11NB60 N-CHANNEL 600V - 0.5Ω - 11A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU11NB60 • ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.6 Ω 11 A TYPICAL RDS(on) = 0.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

800MHz CDMA Handset Circuit Diagram

Abstract: IS98A MAX2205 MAX2205EBS MAX2206 MAX2206EBS MAX2207 MAX2207EBS MAX2208
Contextual Info: 19-2015; Rev 1; 4/02 KIT ATION EVALU E L B AVAILA RF Power Detectors in UCSP Features The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

MAX2202

Abstract: JESD51-7
Contextual Info: 19-5496; Rev 1; 2/11 KIT ATION EVALU E L B A AVAIL RMS Power Detector Features The MAX2202 RMS power detector is designed to operate from 800MHz to 2.0GHz. The device is ideal for wideband code-division multiple access WCDMA , cdma2000 , and high-speed downlink/uplink packet

AX225

Abstract: MAX231
Contextual Info: ykiyjxivki 19-4323; Rev 7; 11/97 + 5V -Po w ered, M u lti-C h a n n e l RS-232 D r i ve r s / R e c e i ve rs Description The MAX220-MAX249 family of line drivers/receivers is intended for all EIA/TIA-232E and V.28/V.24 communica­ tions interfaces, particularly applications where ±12V is

MAX249

Abstract: MAX232AEPE MAX232AESE MAX232AEWE MAX232 MAX243 MAX242 MAX220 MAX225 MAX235
Contextual Info: 19-4323; Rev 15; 1/06 +5V-Powered, Multichannel RS-232 Drivers/Receivers Next-Generation Device Features The MAX220–MAX249 family of line drivers/receivers is intended for all EIA/TIA-232E and V.28/V.24 communications interfaces, particularly applications where ±12V is

china schematic diagram

Abstract: STU7NB90
Contextual Info: STU7NB90  N - CHANNEL 900V - 1.2Ω - 7.3A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU7NB90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.45 Ω 7.4 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING