MAR01 Search Results

JESD22-A117

Abstract: TEP011 mar01 SCF384G APS3 SCM288G ISO7816 super harvard architecture block diagram flash "high temperature data retention" mechanism SST superflash
Contextual Info: SCM288G Product Brief MAR014 - rev1 SCM288G ‐ Product Brief Trademark Starchip is a registered trademark of Starchip Company. This product uses SuperFlash® technology. Super Flash® is registered trademark of Silicon Storage Technology,

Contextual Info: A B C D E G F H REVISIONS DESCRIPTION, ECN, EAR NO. DATE APP'D A B PROPOSAL DRAWING EAR 13841 UPDATED AS PER PCN-C1087 MAR04/11 MAR01/12 K.L S.M 1 89.61 3.528 1 REV 3.25 .128 MOUNTING HOLE 34.75 1.368 2.74 .108 TYP. 9.14 .360 TYP. 10.80 .425 2 2 3.30 .130

JESD22-A117

Abstract: SCM320G SCF384G super harvard architecture block diagram arc risc JESD47 ISO7816 iso7816 class c JESD-47 starchip
Contextual Info: SCM320G Product Brief MAR014 - rev1 SCM320G ‐ Product Brief Trademark Starchip is a registered trademark of Starchip Company. This product uses SuperFlash® technology. Super Flash® is registered trademark of Silicon Storage Technology,

170R6

Contextual Info: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. CE DIST 16 REVISIONS DESCRIPTION LTR DATE REV PER ECN O UBO -O I3 3 -0 1 01 MAR01 OWN APVD DEH FA D D W HIT E 0 .2 3 ± 0 .0 2 5

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. 3 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. D 12.0 . 4 7 2 REF ASSEMBLED B CABLE TRIM DIMENSIONS HEX CRIMP: 3.8 (,151) A AMP 1 4 7 1 -9 REV 31MAR2000 12 MAR01 10:47am AMP50099

JESD22-A117

Abstract: SCF328G subscriber identity module diagram JESD47 starchip super harvard architecture block diagram flash "high temperature data retention" mechanism TEP011 mar01 ISO7816
Contextual Info: SCF320G SCF328G - SCF335G Product Brief MAR013 ‐ rev1 SCF320G ‐ Product Brief Trademark Starchip is a registered trademark of Starchip Company. This product uses SuperFlash® technology. Super Flash® is registered trademark of Silicon Storage Technology,

82012

Abstract: MARK UU1 TSAL62 TSAL6200 TSOP1130UU1 TSOP1133UU1 TSOP1136UU1 TSOP1137UU1 TSOP1138UU1 TSOP1140UU1
Contextual Info: TSOP11.UU1 Vishay Telefunken Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type TSOP1130UU1 TSOP1136UU1 TSOP1138UU1 TSOP1156UU1 fo 30 kHz 36 kHz 38 kHz 56 kHz Type TSOP1133UU1 TSOP1137UU1 TSOP1140UU1 fo 33 kHz

GSM intercom circuit diagram

Abstract: sharc ADSP-21xxx architecture sharc ADSP-21xxx general block diagram sharc 21xxx architecture block diagram sharc ADSP-21xxx ADSST-DAP-EVAL01 fingerprint scanner circuit ADSP-21060 1994 MIP FLOAT LEVEL SWITCH NAT 40 reliance electric 20 hp DC motor drives
Contextual Info: 35 DSP Selection Guide 2001 Edition 19:30:35 18:30:35 12:30:35 11:30:35 09:30:35 02:30:35 01:30:35 23:00:35 19:30 Table of Contents Introduction to ADI DSPs 16-Bit DSP Key Products 32-Bit DSP Key Products ADI DSP Overview Markets & Applications Key Benefits

Contextual Info: A B C D E G F H REVISIONS 4.50 .177 2.00 .079 24.00 .945 10.20 .402 4.00 .157 REV DESCRIPTION, ECN, EAR NO. DATE APP'D C PRODUCT DRAWING EAR 13560 JUL10/09 K.L. DATE CODE INK MARKING 1 8.38±0.40 .330±.016 1 18.00 .709 14.00 .551 13.64±0.40 .537±.016

ISS 99

Abstract: pressure sensor strain gauge CiDRA temperature gauge sensor pressure sensor STRAIN GAUGE Optical-Pressure-Sensor harsh environment PRESSURE SENSOR ISS 99 diode datasheet electromagnetic transducer
Contextual Info: PRELIMINARY BULLETIN PRELIMINARY BULLETIN PRELIMINARY BULLETIN Optical Pressure Sensor Specifications CiDRA Industrial Sensing Solutions ISS introduces an optical pressure measurement system for use in process monitoring applications. This product is based

2A1110

Abstract: MUSB-C111-30 P-MUSB-C211-3X P-MUSB-C MUSB-C211-31 450-013 MUSB
Contextual Info: 7 8 6 1 2 3 4 5 REV - DESCRIPT - DATE - APPRVD . . . F F 1.20 30.5 1.46 37.0 .64 16.3 E E 1.96 49.7 .236 6.00 .70 17.8 .76 19.4 .98 24.9 D D .20 5.0 4-40 UNC x 5.5 [.217] LENGTH 2 HOLES C 1.36 34.7 DUST COVER, FOR MORE INFORMATION SEE P-MUSB-2A111-0X4 NOTES:

P2103ND5G

Contextual Info: コンプリメンタリーパワー MOSFET ELM35604KA-S •概要 ■特長 ELM35604KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=8.5A

复合

Abstract: ELM35604KA P2103ND5G
Contextual Info: 复合沟道 MOSFET ELM35604KA-S •概要 ■特点 ELM35604KA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=8.5A ·Id=-7A

ph76

Abstract: ph77 EM78862 EM78862B EM78869 EM78P862A ph71
Contextual Info: EM78862B 8-Bit RISC Type Microprocessor Product Specification VERSION 1.1 ELAN MICROELECTRONICS CORP. March 2005 Specification Revision Chronology Version Revision Description Date 1.0 Initial version Aug. 02, 2004 1.1 Revised operting temp to –40°C ~ 85°C

Contextual Info: BAT 64-02W Silicon Schottky Diode • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications 2 • Integrated diffused guard ring • Low forward voltage 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. ALL FOR PUBLICATION R IG H T S 6 4 5 3 2 , 19 LOC REVISIONS DI ST AA 23 R ES ER V ED . DESCRIPTION C REACTIVATED: MAR01 -1; EC 0U1C-0098-01 DLD A WR MATERIAL; HOUSING - NYLON HOLDING COHPOOND,

vALOX 310 SEO

Abstract: mar01 Stanyl valox 420 seo Valox 310
Contextual Info: 501-373-2 Qualification Test Report 23Jul03 Rev O EC 0990-0838-03 Pivot II Connector, Two Pair 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Two Pair Pivot II Connector to determine its conformance to the requirements of Product Specification 108-1657-2 Revision A.

P2103ND5G

Contextual Info: Complementary MOSFET ELM35604KA-S •General Description ■Features ELM35604KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=8.5A Rds(on) < 21mΩ(Vgs=10V) Rds(on) < 32mΩ(Vgs=4.5V)

Contextual Info: REVISIONS SYlvl ZONE ECN, ERN A NO. DATE PROPOSAL B APPRD . M A R 01 / 1 2 L.CHAN SEPARATE THE LED DRAWING J U N 0 1 / 1 2 L.CHAN YELLOW GREEN 10 OR _ _ 9 OR 12 RED 11 GREEN BI-COLOUR LED DETAIL RED/YELLOW AMD GREEN/ORANGE LED’S ARE ALSO AVAILABLE FRONT VIEW

ECO-09-020932

Contextual Info: 4 3 DRAWING MADE IN THIRD ANG LE PR O JEC TIO N TH IS D R A W I N G IS U N P U B L I S H E D . C CO PYR IG HT 19 R E L E A S E D FOR PU BLIC ATIO N BY AMP IN C O R P O R A T E D . A L L IN T E R N A T IO N A L 2 D IS T LOC ,19 50 Ah R IG H TS R E S E R V E D .

Contextual Info: 8 7 6 1 2 3 4 5 REV - DESCRIPT - DATE - APPRVD . . . F F 1.20 30.5 .57 14.5 .64 16.3 1.00 25.4 E E 1.83 46.6 .59 15.0 .70 17.8 .92 23.3 .62 15.6 D .17 4.4 4-40 UNC x 5.5 [.217] LENGTH 2 HOLES .20 5.0 C D 1.64 41.6 NOTES: DUST COVER, FOR MORE INFORMATION SEE P-MUSB-2A111-0X4

pnp array

Abstract: MARKING WW DSA0037426
Contextual Info: SEMB4 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =10kΩ)

DIN 6784

Abstract: BCR153 BCR153F BCR153L3 BCR153T BCR153U SC74 SC75
Contextual Info: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R2 =2.2kΩ • BCR153U: Two internally isolated transistors with good matching in one multichip package BCR153F/L3

1355046

Abstract: 1355046 junior Power Timer ISO 8015 4-22poL 929504-1 0P05 AMP junior timer contact junior power timer AMP junior power timer contact
Contextual Info: Ï 7 C CO PYRIGHT 1995 BY AMP R E L E A S E D FOR P U B L I C A T I O N F R E I F UE R V E R O E F F E N T L I CHUNG ALL R IG H T S R E S E R V E D . INCORPORATED. A L LE R E I C H T E VORBEHALTEN. 1995 6 MATED WITH: P ASSEND ZU: ï ï 5 4 2 3 DI ST LOG 929505