12MAR01 Search Results

Contextual Info: 8 THIS DRAWING IS UNPU BUSHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 DIST LOC ALL RIGHTS RESERVED. GP REVISIONS 00 LTR DESCRIPTION □ATE REVISED PER 0S1D-0032-01 KEY 12MAR01 MM APVD AH DS D D 22.98 [.905] MAX, [,2 9 5 ] A MATERIAL

BZX85B

Abstract: BZX85B2V7 DIODE BZX85b
Contextual Info: BZX85B. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Applications 94 9369 Voltage stabilization Order Instruction Type BZX85B2V7 Ordering Code

Diode A007

Contextual Info: BZX85C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications 94 9369 Voltage stabilization Order Instruction

Contextual Info: BZT55C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances 96 12009 Applications Voltage stabilization Order Instruction

Contextual Info: TZQ5221B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization

TZQ5221B

Abstract: TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5226B TZQ5267B
Contextual Info: TZQ5221B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization

BZW03D

Abstract: BZW03D6V8
Contextual Info: BZW03D. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping sealed package Applications 94 9588 Voltage regulators and transient suppression circuits Order Instruction

BZW03C

Abstract: BZW03C6V8
Contextual Info: BZW03C. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9588 Voltage regulators and transient suppression circuits Order Instruction

BZT03D

Abstract: BZT03D6V2
Contextual Info: BZT03D. Vishay Semiconductors Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

"MARKING CODE M"

Abstract: SC-89 Si1035X
Contextual Info: Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 8 @ VGS = –4.5 V

BZX85C 10

Abstract: BZX85B BZX85C BZX85C2V7 TL 43
Contextual Info: BZX85C. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications 94 9369 Voltage stabilization Order Instruction

BZX85C

Abstract: BZX85C 10 BZX85B BZX85C2V7 Vishay Diode A4 C 6V2 diode bzx85c vishay
Contextual Info: BZX85C. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications 94 9369 Voltage stabilization Order Instruction

BZX55B

Abstract: BZX55B2V4
Contextual Info: BZX55B. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D D Very sharp reverse characteristic Low reverse current level Low noise Very high stability Available with tighter tolerances VZ–tolerance ± 2% 94 9367 Applications Voltage stabilization

02T02

Contextual Info: TZMC. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Applications 94 9371 Voltage stabilization Order Instruction

TZS4678

Abstract: TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4717 TZS4678-GS08
Contextual Info: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise 96 12009 Applications Voltage stabilization Order Instruction

Contextual Info: BZT03C. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

1N5221B

Abstract: 1N5267B TZM5221B TZM5222B TZM5223B TZM5224B TZM5267B
Contextual Info: TZM5221B.TZM5267B Vishay Semiconductors Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Electrical data identical with the devices 1N5221B.1N5267B D Low reverse current level D VZ–tolerance ± 5% 94 9371 Applications

TZQ5221B

Abstract: TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5226B TZQ5267B
Contextual Info: TZQ5221B.TZQ5267B Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization

Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW

Contextual Info: WSK Vishay Dale Power Metal Strip Resistors, Low Value, Surface Mount, 4 - Terminal FEATURES • 4-Terminal design allows for 1% tolerance down to 0.001Ω and 0.5% tolerance down to 0.003Ω • Ideal for all types of precision current sensing, voltage

DZ23C2V7

Abstract: DZ23C51 marking code sot-23 51 national 3V6 SOT-23
Contextual Info: DZ23C2V7–DZ23C51 Vishay Telefunken 300 mW Dual Surface Mount Zener Diodes Features D D D D D SOT–23 surface mount package 300 mW power dissipation rating Ideally suited for automatic insertion DVZ for both diodes in one case is ≤ 5% Common anode style available see AZ series

Contextual Info: BZT03D. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

BZX55C

Abstract: BZX55B BZX55C2V4 bzx5
Contextual Info: BZX55C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9367 Voltage stabilization Order Instruction

BZW03D

Abstract: BZW03D6V8
Contextual Info: BZW03D. Vishay Semiconductors Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping sealed package Applications 94 9588 Voltage regulators and transient suppression circuits Order Instruction